Can fitting of accelerated TDDB with a simple function of E predict the dielectric degradation under operating voltages?.
Abstract not provided.
Haase, Gad S↗
Engineering topics
Haase, Gad S
Publications and source records attributed to Haase, Gad S.
Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2 Interface Defects.
Abstract not provided.
Moxim, Stephen J.↗
IIRW 2018 Discussion Group Report: Product Reliability for Low-Volume High-Consequence Integrated-Circuits Fabrication.
Abstract not provided.
Haase, Gad S↗
Progress and Challenges in Developing a Reliable Embedded ReRAM Memory for Hostile Environments.
Abstract not provided.
Marinella, Matthew↗
Characterizing Switching Variability in TaOx Resistive Memories.
Abstract not provided.
Hughart, David Russell↗
Characterizing Switching Variability in TaOx Memristors.
Abstract not provided.
Hughart, David Russell↗
Stress Factor Assessment for Microsystems-Enabled Photovoltaics.
Abstract not provided.
Yang, Benjamin Bing-Yeh↗
Reliability Model Development for Microsystems-Enabled Photovoltaics.
Abstract not provided.
Yang, Benjamin Bing-Yeh↗
Failure Analysis Techniques for Microsystems-Enabled Photovoltaics.
Abstract not provided.
Yang, Benjamin Bing-Yeh↗