Resonance-Amplified Terahertz Near-Field Spectroscopy of a Single Nanowire
Not Available
Norman, Sarah↗
Engineering topics
Hale, Lucy L.
Publications and source records attributed to Hale, Lucy L..
Near-Field Spectroscopy of Individual Asymmetric Split-Ring Terahertz Resonators
Not Available
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Near-field spectroscopy of Dirac plasmons in Bi 2 Se 3 ribbon arrays
Plasmons supported in the massless electron surface states of topological insulators (TIs), known as Dirac plasmons, have great potential in next generation optoelectronics. However, their inherent confinement to the surface makes the investigation of Dirac plasmons challenging. Near-field techniques provide the ideal platform to directly probe Dirac plasmons due to the sensitivity to evanescent fields at the surface. Here, we demonstrate the use of aperture near-field spectroscopy for the investigation of localized terahertz (THz) Dirac plasmon resonances in Bi 2 Se 3 ribbon arrays with widths ranging from 10 to 40 µm. Unlike scattering THz near-field techniques, the aperture method is most sensitive to plasmons with the relevant lower-momenta corresponding to plasmon wavelengths on the scale of ~20 µm. The combination of THz time-domain spectroscopy and aperture near-field microscopy enables sampling of localized Dirac plasmons in the near-field zone in the 0.5–2.5 THz range. We map the plasmon dispersion, which reveals a coupled plasmon–phonon polariton interaction. The near-field spectra show a higher contrast of the upper polariton branch in comparison with far-field observations. The information revealed by aperture near-field spectroscopy could deepen our understanding of the behavior of Dirac plasmons, leading to the potential development of real-world TI devices.
42 ENGINEERING↗
Terahertz Detection Using Enhanced Two‐Step Absorption in Photoconductive Metasurfaces Gated at λ = 1.55 µm
Abstract Superior ultrafast photoconductive properties make low temperature grown (LT) GaAs one of the best materials for photoconductive terahertz (THz) detection. However, the large bandgap of LT‐GaAs limits its operation to gating at wavelengths shorter than 870 nm. Here, it is demonstrated for the first time that nanostructuring the LT‐GaAs into a highly absorbing metasurface enables THz photoconductive detection with a pulsed laser at λ = 1.55 µm. The very weak sub‐bandgap absorption mediated by midgap states in LT‐GaAs is strongly enhanced using the concept of perfect absorption via degenerate critical coupling. Integrated with a THz antenna, the LT‐GaAs metasurface enables high sensitivity THz detection with a high dynamic range of 60 dB and large bandwidth up to 4.5 THz. The LT‐GaAs metasurface has the potential to serve as a universal ultrafast switching element for THz applications, enabling low‐cost, turn‐key THz systems for a variety of real‐world applications.
Jung, Hyunseung↗
Terahertz Pulse Generation from GaAs Metasurfaces
Not Available
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Highly efficient terahertz photoconductive metasurface detectors operating at microwatt-level gate powers
Despite their wide use in terahertz (THz) research and technology, the application spectra of photoconductive antenna (PCA) THz detectors are severely limited due to the relatively high optical gating power requirement. This originates from poor conversion efficiency of optical gate beam photons to photocurrent in materials with sub-picosecond carrier lifetimes. Here we show that using an ultra-thin (160 nm), perfectly absorbing low-temperature grown GaAs metasurface as the photoconductive channel drastically improves the efficiency of THz PCA detectors. This is achieved through perfect absorption of the gate beam in a significantly reduced photoconductive volume, enabled by the metasurface. This Letter demonstrates that sensitive THz PCA detection is possible using optical gate powers as low as 5 µW—three orders of magnitude lower than gating powers used for conventional PCA detectors. We show that significantly higher optical gate powers are not necessary for optimal operation, as they do not improve the sensitivity to the THz field. This class of efficient PCA THz detectors opens doors for THz applications with low gate power requirements.
47 OTHER INSTRUMENTATION↗
Noninvasive Near‐Field Spectroscopy of Single Subwavelength Complementary Resonators
Abstract Subwavelength metallic resonators provide a route to achieving strong light–matter coupling by means of tight confinement of resonant electromagnetic fields. Investigation of such resonators however often presents experimental difficulties, particularly at terahertz (THz) frequencies. A single subwavelength resonator interacts weakly with THz beams, making it difficult to probe it using far‐field methods, whereas arrays of resonators exhibit inter‐resonator coupling, which affect the resonator spectral signature and field confinement. Here, traditional far‐field THz spectroscopy is systematically compared with aperture‐type THz near‐field microscopy for investigating complementary THz resonators. While the far‐field method proves impractical for measuring single resonators, the near‐field technique gives high signal‐to‐noise spectral information, only achievable in the far‐field with resonator arrays. At the same time, the near‐field technique allows to analyze single resonators without significant interaction with the near‐field probe. Furthermore, the near‐field technique allows highly confined fields and surface waves to be mapped in space and time. This information gives invaluable insight into spectral response in resonator arrays. This near‐field microscopy and spectroscopy method enables investigations of strong light–matter coupling at THz frequencies in the single‐resonator regime.
Hale, Lucy L.↗