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Han, Myung-Geun

Publications and source records attributed to Han, Myung-Geun.

27 records · Page 2

Topological spin/structure couplings in layered chiral magnet Cr 1/3 TaS 2 : The discovery of spiral magnetic superstructure

Significance Magnets in which chirality of crystal lattice gives rise to noncollinear spin orders are ideal playgrounds for studies of novel physical phenomena originating from the nontrivial topology of magnetic textures. Most studies have been focused on homochiral materials, while topological magnetic states of heterochiral magnets have rarely been explored. Here, we report a layered chiral helimagnet with highly tunable topological heterochiral states. Tuning the chiral domain density, we have observed a topological magnetic texture that has the form of a spiral unfolding in the radial direction. In weak in-plane fields, this spiral magnetic superstructure transforms into a nonspiral array of concentric rings. Our results open a horizon for studies of tunable topological magnetic textures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Hybrid Symmetry Epitaxy of the Superconducting Fe(Te,Se) Film on a Topological Insulator

It is challenging to grow an epitaxial 4-fold compound superconductor (SC) on a 6-fold topological insulator (TI) platform due to the stringent lattice-matching requirement. Here, we demonstrate that Fe(Te,Se) can grow epitaxially on a TI (Bi 2 Te 3 ) layer due to accidental, uniaxial lattice match, which is dubbed as “hybrid symmetry epitaxy”. This new growth mode is critical to stabilizing robust superconductivity with TC as high as 13 K. Furthermore, the superconductivity in this FeTe 1–x Se x /Bi 2 Te 3 system survives in the Te-rich phase with Se content as low as x = 0.03 but vanishes at Se content above x = 0.56, exhibiting a phase diagram that is quite different from that of the conventional Fe(Te,Se) systems. This unique heterostructure platform that can be formed in both TI-on-SC and SC-on-TI sequences opens a route to unprecedented topological heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Antiphase-Boundary-Engineered Domain Switching in a (110)-Oriented BiFeO 3 Film

A ferroelectric domain wall memory device exploits the presence (or absence) of domain walls as the basis for information storage. Although structural defects strongly influence ferroelectric domain wall nucleation and growth, this correlation is far from being fully understood. For example, a single defect can play opposing roles: it can act as a nucleation site to initiate domain switching or, conversely, serve as a pinning center inhibiting domain wall motion. This is particularly the case for antiphase boundaries (APBs), whose influence on switching remains relatively unexplored despite being ubiquitous in oxide perovskite ferroelectrics. Here, we use aberration-corrected scanning transmission microscopy and in situ transmission electron microscopy under an applied bias to extensively characterize the influence of an APB on the switching behavior in a (110)-oriented BiFeO 3 thin film. We demonstrate that deterministic nucleation occurs in the proximity of a vertically oriented APB, following which domain growth occurs laterally in a symmetric fashion. Atomic-scale structural analysis reveals that the shear operation vector for the APB is 1/2[110]; this half-unit-cell shift extends over a few nanometers, implying that the APB plane is inclined toward the imaging direction. The symmetric switching observation is attributed to local inhomogeneous lattice strain and a reduction of polarization caused by the APB. These results demonstrate that an extended structural defect can be used as an active switching element rather than a stumbling block in reprogrammable domain-wall-based devices. Ultimately, this will expand the capabilities of ferroelectric thin films for future electronic devices based on ferroelectric domain walls.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Josephson detection of time-reversal symmetry broken superconductivity in SnTe nanowires

A Josephson junction (JJ) couples the supercurrent flowing between two weakly linked superconductors to the phase difference between them via a current-phase relation (CPR). While a sinusoidal CPR is expected for conventional junctions with insulating weak links, devices made from some exotic materials may give rise to unconventional CPRs and unusual Josephson effects. In this work, we present such a case: we investigate the proximity-induced superconductivity in SnTe nanowires by incorporating them as weak links in JJs and observe a deviation from the standard CPR. We report on indications of an unexpected breaking of time-reversal symmetry in these devices, detailing the unconventional characteristics that reveal this behavior. These include an asymmetric critical current in the DC Josephson effect, a prominent second harmonic in the AC Josephson effect, and a magnetic diffraction pattern with a minimum in critical current at zero magnetic field. The analysis examines how multiband effects and the experimentally visualized ferroelectric domain walls give rise to this behavior, giving insight into the Josephson effect in materials that possess ferroelectricity and/or multiband superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Strain-Induced Atomic-Scale Building Blocks for Ferromagnetism in Epitaxial LaCoO 3

The origin of strain-induced ferromagnetism, which is robust regardless of the type and degree of strain in LaCoO 3 (LCO) thin films, is enigmatic despite intensive research efforts over the past decade. Here, by combining scanning transmission electron microscopy with ab initio density functional theory plus U calculations, we report that the ferromagnetism does not emerge directly from the strain itself but rather from the creation of compressed structural units within ferroelastically formed twin-wall domains. Here, the compressed structural units are magnetically active with the rocksalt-type high-spin/low-spin order. Our study highlights that the ferroelastic nature of ferromagnetic structural units is important for understanding the intriguing ferromagnetic properties in LCO thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Operando characterization of conductive filaments during resistive switching in Mott VO 2

Significance To perform hardware-based neuromorphic computing, novel materials exhibiting a wide variety of electronic properties are currently being explored. VO 2 is well known to exhibit an insulator-to-metal transition as well as volatile resistive switching. Many questions regarding the basic mechanism of the nonvolatile switching in this material are unanswered. In this work, the formation and relaxation of conductive filaments through nonvolatile resistive switching in VO 2 devices have been realized. The V 5 O 9 Magnéli phase conductive filament has been identified. Our results demonstrate that both resistive switching behaviors can be achieved in a single material, crucial for future technology like resistive switching memories or neuromorphic logic.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Single-crystalline epitaxial TiO film: A metal and superconductor, similar to Ti metal

Titanium monoxide (TiO), an important member of the rock salt 3d transition-metal monoxides, has not been studied in the stoichiometric single-crystal form. It has been challenging to prepare stoichiometric TiO due to the highly reactive Ti 2+ . We adapt a closely lattice-matched MgO(001) substrate and report the successful growth of single-crystalline TiO(001) film using molecular beam epitaxy. This enables a first-time study of stoichiometric TiO thin films, showing that TiO is metal but in proximity to Mott insulating state. We observe a transition to the superconducting phase below 0.5 K close to that of Ti metal. Density functional theory (DFT) and a DFT-based tight-binding model demonstrate the extreme importance of direct Ti–Ti bonding in TiO, suggesting that similar superconductivity exists in TiO and Ti metal. Our work introduces the new concept that TiO behaves more similar to its metal counterpart, distinguishing it from other 3d transition-metal monoxides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional doping schemes in covalently-bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of “all-2D” vdW heterojunctions. Here, we demonstrate, 2D/3D semiconductor heterojunctions using MoS2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS2, we demonstrate devices that concurrently exhibit over seven orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi-level tuning at the junction opening up possibilities for novel 2D/3D heterojunction device architectures

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗