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Hansen, K. C.

Publications and source records attributed to Hansen, K. C..

13 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Io's Magnetospheric Interaction: An MHD Model with Day-Night Asymmetry

In this paper we present the results of all improved three-dimensional MHD model for Io's interaction with Jupiter's magnetosphere. We have included the day-night asymmetry into the spatial distribution of our mass-loading, which allowed us to reproduce several smaller features or the Galileo December 1995 data set. The calculation is performed using our newly modified description of the pick-up processes that accounts for the effects of the corotational electric field existing in the Jovian magnetosphere. This change in the formulation of the source terms for the MHD equations resulted in significant improvements in the comparison with the Galileo measurements. We briefly discuss the limitations of our model and possible future improvements.

Kabin, K.↗
NASA NTRS2000

Global MHD Simulations of Space Plasma Environments: Heliosphere, Comets, Magnetospheres of Plants and Satellites

Magnetohydrodynamics (MHD) provides an approximate description of a great variety of processes in space physics. Accurate numerical solutions of the MHD equations are still a challenge, but in the past decade a number of robust methods have appeared. Once these techniques made the direct solution of MHD equations feasible, a number of global three-dimensional models were designed and applied to many space physics objects. The range of these objects is truly astonishing, including active galactic nuclei, the heliosphere, the solar corona, and the solar wind interaction with planets, satellites, and comets. Outside the realm of space physics, MHD theory has been applied to such diverse problems as laboratory plasmas and electromagnetic casting of liquid metals. In this paper we present a broad spectrum of models of different phenomena in space science developed in the recent years at the University of Michigan. Although the physical systems addressed by these models are different, they all use the MHD equations as a unifying basis.

Kabin, K.↗
NASA NTRS1983

Generating SiF4 From H2SiF6

Sodium and barium fluorosilicates precipitated and thermally decomposed into silicon tetrafluoride. Barium fluorosilicate thermally decomposes at lower temperatures in shorter times, to give same percentage yield of silicon tetrafluoride gas, than sodium fluorosilicate. Salt byproducts of decompositions recycled to precipitate fluorosilicates from hexafluorosilicic acid, the primary reactant.

Hansen, K. C.↗
NASA NTRS1981

Process feasibility study in support of silicon material task 1

Results for process system properties, chemical engineering and economic analyses of the new technologies and processes being developed for the production of lower cost silicon for solar cells are presented. Analyses of process system properties are important for chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major physical, thermodynamic and transport property data are reported for silicon source and processing chemical materials.

Yaws, C. L.↗
NASA NTRS1979

Process Feasibility Study in Support of Silicon Material Task 1

Analysis of process system properties was continued for silicon source materials under consideration for producing silicon. The following property data are reported for dichlorosilane which is involved in processing operations for silicon: critical constants, vapor pressure, heat of vaporization, heat capacity, density, surface tension, thermal conductivity, heat of formation and Gibb's free energy of formation. The properties are reported as a function of temperature to permit rapid engineering usage. The preliminary economic analysis of the process is described. Cost analysis results for the process (case A-two deposition reactors and six electrolysis cells) are presented based on a preliminary process design of a plant to produce 1,000 metric tons/year of silicon. Fixed capital investment estimate for the plant is $12.47 million (1975 dollars) ($17.47 million, 1980 dollars). Product cost without profit is 8.63 $/kg of silicon (1975 dollars)(12.1 $/kg, 1980 dollars).

Li, K. Y.↗
NASA NTRS1979

Process feasibility study in support of silicon material, task 1

Analyses of process system properties were continued for materials involved in the alternate processes under consideration for semiconductor silicon. Primary efforts centered on physical and thermodynamic property data for dichlorosilane. The following property data are reported for dichlorosilane which is involved in processing operations for solar cell grade silicon: critical temperature, critical pressure, critical volume, critical density, acentric factor, vapor pressure, heat of vaporization, gas heat capacity, liquid heat capacity and density. Work was initiated on the assembly of a system to prepare binary gas mixtures of known proportions and to measure the thermal conductivity of these mixtures between 30 and 350 C. The binary gas mixtures include silicon source material such as silanes and halogenated silanes which are used in the production of semiconductor silicon.

Li, K. Y.↗
NASA NTRS1979

Process Feasibility Study in Support of Silicon Material, Task 1

During this reporting period, major activies were devoted to process system properties, chemical engineering and economic analyses. Analyses of process system properties was continued for materials involved in the alternate processes under consideration for solar cell grade silicon. The following property data are reported for silicon tetrafluoride: critical constants, vapor pressure, heat of varporization, heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation and Gibb's free energy of formation. Chemical engineering analysis of the BCL process was continued with primary efforts being devoted to the preliminary process design. Status and progress are reported for base case conditions; process flow diagram; reaction chemistry; material and energy balances; and major process equipment design.

Li, K. Y.↗
NASA NTRS1978

Process feasibility study in support of silicon material task 1

Process system properties are analyzed for materials involved in the alternate processes under consideration for solar cell grade silicon. The following property data are reported for trichlorosilane: critical constants, vapor pressure, heat of vaporization, gas heat capacity, liquid heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation, and Gibb's free energy of formation. Work continued on the measurement of gas viscosity values of silicon source materials. Gas phase viscosity values for silicon tetrafluoride between 40 C and 200 C were experimentally determined. Major efforts were expended on completion of the preliminary economic analysis of the silane process. Cost, sensitivity and profitability analysis results are presented based on a preliminary process design of a plant to produce 1,000 metric tons/year of silicon by the revised process.

Li, K. Y.↗
NASA NTRS1978

Process feasibility study in support of silicon material task 1

Initial results for gas thermal conductivity of silicon tetrafluoride and trichlorosilane are reported in respective temperature ranges of 25 to 400 C and 50 to 400 C. For chemical engineering analyses, the preliminary process design for the original silane process of Union Carbide was completed for Cases A and B, Regular and Minimum Process Storage. Included are raw material usage, utility requirements, major process equipment lists, and production labor requirements. Because of the large differences in surge tankage between major unit operations the fixed capital investment varied from $19,094,000 to $11,138,000 for Cases A and B, respectively. For the silane process the original flowsheet was revised for a more optimum arrangement of major equipment, raw materials and operating conditions. The initial issue of the revised flowsheet (Case C) for the silane process indicated favorable cost benefits over the original scheme.

Fang, C. S.↗