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Harris, J. S., Jr.

Publications and source records attributed to Harris, J. S., Jr..

5 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Intercell ohmic contacts for high efficiency multijunction solar converters

The monolithic multijunction converter is an attractive approach to achieving solar/electric conversion with greater than 30% efficiency. A major technical challenge in the development of such devices is the requirement for low resistance, optically transparent intercell contacts between adjacent junctions. These contacts should transmit, without significant loss, the spectral fraction of the incident sunlight which is not absorbed and converted in the overlying junction materials. Their contact resistances must be low enough to prevent significant I to the 2d power R loss at the designed current density levels. They should also exhibit adequate thermal conductivity to prevent device overheating when subjected to the designed illumination level. Recent encouraging results for the development of such contacts are presented.

Zehr, S. W.↗
NASA NTRS1978

The 1.06 optical receiver

High performance 1.06 micron m avalanche photodetectors (APDs), fabricated in the GaAlSb system, have high quantum efficiency (90 percent), high speed (risetime less than 60 ps) and low leakage currents (less than 50 na). The dark current represents more than an order of magnitude reduction compared to previously reported results. The high speed avalanche gain of these devices is between 20 and 50. The area uniformity is better than + or - 10 percent. GaAlAs APDs at 0.53 micron m have even faster speed, lower dark currents, and high speed gains of 100 to 200. Optical rangefinders based on measured APD performance parameters have far superior performance when compared to even ideal photomultiplier tubes in either a one color or two color rangefinder system. For a one color system, f factor of two lower time jitter can be achieved with identical transmitted power. The superiority of the APD based two color receiver is significant and exists in the entire range of desired time jitters (less than 100 ps) and received power levels.

Tomasetta, L. R.↗
NASA NTRS1977

Auger profiling of 'abrupt' LPE Al/x/Ga/1-x/As-GaAs heterojunctions

Auger analysis in conjunction with ion milling was used to study depth profiles of 'abrupt' Al/x/Ga/1-x/As-GaAs heterojunctions grown by liquid-phase epitaxial (LPE) techniques. Results are presented on samples with x = 0.43, 0.60, and 0.85. The interface widths obtained are listed in a table together with the growth conditions and the layer thicknesses. The values for the layer thicknesses are in the range from 125 to 950 A. It is found that for thin layers the interface widths do not differ greatly from the average value of 110A.

Garner, C. M.↗
NASA NTRS1977

High sensitivity 1.06 micron optical receiver for precision laser range finding

Aluminum gallium antimonide avalanche photodiodes with average gain of 10, internal quantum efficiency of greater than 60%, capacitance less than 0.2pf, and dark current of less than 1 micron were designed and fabricated for use in a low noise optical receiver suitable for 2 cm accuracy rangefinding. Topics covered include: (1) design of suitable photodetector structures; (2) epitaxial growth of AlGaSb devices; (3) fabrication of photodetectors; and (4) electro-optics characterization.

Scholl, F. W.↗