Single-event upset (SEU) in a DRAM with on-chip error correction
Results are given of SEU measurements on 256K dynamic RAMs with on-chip error correction. They are claimed to be the first ever reported. A (12/8) Hamming error-correcting code was incorporated in the layout. Physical separation of the bits in each code word was used to guard against multiple bits being disrupted in any given word. Significant reduction in observed errors is reported.
Zoutendyk, J. A.↗