Engineering topics
Publications and source records attributed to Hawrylo, Frank Z..
A single crystal layer of either cadmium sulfide or an alloy of cadmium sulfide and indium phosphide is epitaxially deposited on a substrate of cadmium sulfide by liquid phase epitaxy using indium as the solvent.
A body including P type indium phosphide has an ohmic contact thereon of an alloy of by weight 81% to 86% gold (Au), 11% to 14% germanium (Ge) and 2% to 5% zinc (Zn). This contact has a low resistance and good adhesion to the indium phosphide body.
A laser diode formed of a rectangular parallelopiped body of single crystalline semiconductor material includes regions of opposite conductivity type indium phosphide extending to opposite surfaces of the body. Within the body is a PN junction at which light can be generated. A stripe of a conductive material is on the surface of the body to which the P type region extends and forms an ohmic contact with the P type region. The stripe is spaced from the side surfaces of the body and extends to the end surfaces of the body. A film of germanium is on the portions of the surface of the P type region which is not covered by the conductive stripe. The germanium film serves to conduct heat from the body and forms a blocking junction with the P type region so as to confine the current through the body, across the light generating PN junction, away from the side surfaces of the body.