Integrated Silicon Platform for Co-planar Design of Vertically Stacked 2.06 THz Mixer Module
The process for fabricating and utilizing the threedimensional Si stack receiver front-end is described in this paper. The capability to have exact dimensionality becomes essential as frequency scales due to the complexity arising in assembly and finer tolerances. Total process yields can be improved through Si fabrication by verifying achievement of specified tolerances lithographically and compatibility to rapid process changes and design fine-tuning. The integrated Si platform with the mounted device is shown in Figure 1. Signal I/O and alignment modalities enable lownoise measurements. Silicon micromachining provides the necessary accuracy for integration at the several THz regime. Particularly, processing and etch recipes have demonstrated smooth surfaces of < 1 μm surface roughness. In consideration is pre-compensating for minute offsets, matching mechanical strain on all interfaces, and including passive alignment verification in the design. As compared to metal blocks, computer numerical controlled (CNC) milling can produce slight burrs in the interfaces resulting in misalignment and resultant strain between two pieces of components. Furthermore, Si integration can make possible arrays of pixel transceivers through compact subsystems for the purpose of measuring multiple lines of spectral content simultaneously in space.