Engineering topics
Hill, C. J.
Publications and source records attributed to Hill, C. J..
Band Engineering, Growth and Characteristics of Type-II InAs/GaSb Superlattice-Based Detectors
We report on band engineering, growth and device performance of infrared photodetectors based on type II InAs/Ga(In)Sb strain layer superlattices (SLs) using the complementary barrier infrared detector (CBIRD) design. The unipolar barriers on either side of the absorber in the CBIRD design in combination with the type-II InAs/GaSb superlattice material system are expected to outperform traditional III-V LWIR (Long-Wave InfraRed) imaging technologies and offer significant advantages over the conventional II-VI material based FPAs (Focal Plane Arrays). The innovative design of CBIRDS, barrier and band offset engineering , low defect density material growth, and robust fabrication processes have resulted in the development of high performance long wave infrared (LWIR) focal plane arrays at JPL (Jet Propulsion Laboratory).
Modulation Transfer Function of Infrared Focal Plane Arrays
Modulation transfer function (MTF) is the ability of an imaging system to faithfully image a given object. The MTF of an imaging system quantifies the ability of the system to resolve or transfer spatial frequencies. In this presentation we will discuss the detail MTF measurements of 1024x1024 pixels mid -wavelength and long- wavelength quantum well infrared photodetector, and 320x256 pixels long- wavelength InAs/GaSb superlattice infrared focal plane arrays (FPAs). Long wavelength Complementary Barrier Infrared Detector (CBIRD) based on InAs/GaSb superlattice material is hybridized to recently designed and fabricated 320x256 pixel format ROIC. The n-type CBIRD was characterized in terms of performance and thermal stability. The experimentally measured NE delta T of the 8.8 micron cutoff n-CBIRD FPA was 18.6 mK with 300 K background and f/2 cold stop at 78K FPA operating temperature. The horizontal and vertical MTFs of this pixel fully delineated CBIRD FPA at Nyquist frequency are 49% and 52%, respectively.
Superlattice Infrared Photodetector Research at the Jet Propulsion Laboratory
III-V semiconductors offer a highly effective platform for the development of sophisticated heterostructure-based MWIR and LWIR detectors, as exemplified by the high-performance double heterostructure (DH) nBn, XBn, and type- II superlattice infrared detectors. A key enabling design element is the unipolar barrier, which is used to implement the complementary barrier infra-red detector (CBIRD) design for increasing the collection efficiency of photo-generated carriers, and reducing dark current generation without impeding photocurrent flow. Heterostructure superlattice detectors that make effective use of unipolar barriers have demonstrated strong reduction of generation-recombination (G-R) dark current due to Shockley-Read-Hall (SRH) processes. In the last several years we solely focused on the development of antimonide based IR detectors. Recently, we demonstrated RoA values over 14,000 Ohm sq cm for a 9.9 micron cutoff device by incorporating electron-blocking and hole-blocking unipolar barriers. This device has shown 300K BLIP operation with f/2 optics at 87 K with blackbody D* of 1.1x10(exp 11) cm Hz1/2/W.
III-V Infrared Research at the Jet Propulsion Laboratory
Jet Propulsion Laboratory is actively developing the III-V based infrared detector and focal plane arrays (FPAs) for NASA, DoD, and commercial applications. Currently, we are working on multi-band Quantum Well Infrared Photodetectors (QWIPs), Superlattice detectors, and Quantum Dot Infrared Photodetector (QDIPs) technologies suitable for high pixel-pixel uniformity and high pixel operability large area imaging arrays. In this paper we report the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP focal plane array (FPA). In addition, we will present the latest advances in QDIPs and Superlattice infrared detectors at the Jet Propulsion Laboratory.
Large Format Multicolor QWIP Focal Plane Arrays
Mid-wave infrared (MWIR) and long-wave infrared (LWIR) multicolor focal plane array (FPA) cameras are essential for many DoD and NASA applications including Earth and planetary remote sensing. In this paper we summarize our recent development of large format multicolor QWIP FPA that cover MWIR and LWIR bands.
Mid-Wave and Long-Wave Infrared Dualband Megapixel QWIP Focal Plane Array
Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel InGaAs/GaAs/AlGaAs based quantum well infrared photodetector (QWIP) focal planes and a 320x256 pixel dual-band pixel co-registered simultaneous QWIP focal plane array have been demonstrated as pathfinders. In this paper, we discuss the development of 1024x1024 MWIR/LWIR dual-band pixel co-registered simultaneous QWIP focal plane array.
Towards Dualband Megapixel QWIP Focal Plane Arrays
Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024 x 1024 pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEDT) of 17 mK at a 95 K operating temperature with f/2.5 optics at 300 K background and the LWIR detector array has demonstrated a NEDT of 13 mK at a 70 K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90 K and 70 K operating temperatures respectively, with similar optical and background conditions. In addition, we have demonstrated MWIR and LWIR pixel co-registered simultaneously readable dualband QWIP focal plane arrays. In this paper, we will discuss the performance in terms of quantum efficiency, NEDT, uniformity, operability, and modulation transfer functions of the 1024 x 1024 pixel arrays and the progress of dualband QWIP focal plane array development work.
Long-Wavelength Infrared (LWIR) Quantum Dot Infrared Photodetector (QDIP) Focal Plane Array
We have exploited the artificial atomlike properties of epitaxially self-assembled quantum dots for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays. Quantum dots are nanometer-scale islands that form spontaneously on a semiconductor substrate due to lattice mismatch. QDIPs are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II-VI material based focal plane arrays. QDIPs are fabricated using robust wide bandgap III-V materials which are well suited to the production of highly uniform LWIR arrays. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR quantum dot structures based on the InAs/InGaAs/GaAs material system. JPL is building on its significant QWIP experience and is basically building a Dot-in-the-Well (DWELL) device design by embedding InAs quantum dots in a QWIP structure. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. In addition the quantum wells can trap electrons and aide in ground state refilling. Recent measurements have shown a 10 times higher photoconductive gain than the typical QWIP device, which indirectly confirms the lower relaxation rate of excited electrons (photon bottleneck) in QDPs. Subsequent material and device improvements have demonstrated an absorption quantum efficiency (QE) of approx. 3%. Dot-in-the-well (DWELL) QDIPs were also experimentally shown to absorb both 45 deg. and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. JPL has demonstrated wavelength control by progressively growing material and fabricating devices structures that have continuously increased in LWIR response. The most recent devices exhibit peak responsivity out to 8.1 microns. Peak detectivity of the 8.1 micrometer devices has reached approx. 1 x 10(exp 10) Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640x512 pixels QDP focal plane array. This QDIP focal plane may has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60K operating temperature. In addition, we have managed to increase the quantum efficiency of these devices from 0.1% (according to the data published in literature) to 20% in discrete devices. This is a factor of 200 increase in quantum efficiency. With these excellent results, for the first time QDIP performance has surpassed the QWIP performance. Our goal is to operate these long-wavelength detectors at much higher operating temperature than 77K which can be passively achieved in space. This will be a huge leap in high performance infrared detectors specifically applicable to space science instruments.
Quantum Well and Quantum Dot Modeling for Advanced Infrared Detectors and Focal Plane Arrays
This viewgraph presentation reviews the modeling of Quantum Well Infrared Detectors (QWIP) and Quantum Dot Infrared Detectors (QDIP) in the development of Focal Plane Arrays (FPA). The QWIP Detector being developed is a dual band detector. It is capable of running on two bands Long-Wave Infrared (LWIR) and Medium Wavelength Infrared (MWIR). The same large-format dual-band FPA technology can be applied to Quantum Dot Infrared Photodetector (QDIP) with no modification, once QDIP exceeds QWIP in single device performance. Details of the devices are reviewed.
Multi-Band and Broad-Band Infrared Detectors Based on III-V Materials for Spectral Imaging Instruments
Quantum well infrared photodetector technology has shown remarkable success by realizing large-format focal plane arrays in both broad-bands and in multi-bands. The spectral response of these detectors based on the III-V material system are tailorable within the mid and long wavelength IR bands (similar to 3-25 mu m) and possibly beyond. Multi-band and broad-band detector arrays have been developed by vertically integrating stacks of multi quantum wells tailored for response in different wavelengths bands. Each detector stack absorbs photons within the specified wavelength band while allowing the transmission other photons, thus efficiently permitting multiband detection. Flexibility in many design parameters of these detectors allows for tuning and tailoring the spectral shape according to application requirements, specifically for spectral imaging instruments.
Multi-Color Megapixel QWIP focal plane arrays for remote sensing
In this paper, we will discuss the performance in terms of quantum efficiency, NEAT, uniformity, operability, and modulation transfer functions of the 1024x1024 pixel arrays and the progress of dualband QWIP focal plane array development work.
1024 x 1024 pixel mid-wavelength and long-wavelength infrared QWIP focal plane arrays for imaging applications
Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 10(24) x 10(24) pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEAT) of 17 mK at a 95 K operating temperature with f/2.5 optics at 300 K background and the LWIR detector array has demonstrated a NEAT of 13 mK at a 70 K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90 K and 70 K operating temperatures respectively, with similar optical and background conditions. In this paper, we will discuss the performance in terms of quantum efficiency, NE(delta)T, uniformity, operability and modulation transfer functions.
Tuning and tailoring of broadband quantum-well infrared photodetector responsivity spectrum.
The spectral response of quantum-well infrared photodetectors (QWIPs) based on the III-V material system are tailorable to narrow or broad bandwidths within mid- and long-wavelength infrared bands. Typical broad-band QWIPs show considerable spectral shape change with bias voltage, particularly near the cut-off wavelength region. Two alternatives to the typical broadband QWIP design have been demonstrated. These designs consist of two multiquantum-well (QW) stacks or alternatively placed QWs and produce nearly fixed spectrums within the operating bias voltages. Flexibility in many design parameters of these detectors allows for tuning and tailoring the spectral shape according to application requirements, specifically for spectral imaging instruments
Linewidth enhancement factor of a type-II quantum-cascade laser
We measured directly the optical gain, refractive index change, and the linewidth enhancement factor of a type-II quantum-cascade laser. We obtained very low linewidth enhancement factor of 0.8 near threshold.
Mid-IR interband cascade lasers for chemical sensing
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Mid-IR interband cascade lasers for chemical sensing
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Progress of Sb-based type-II mid-IR interband cascade lasers
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