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Ho, J. C.

Publications and source records attributed to Ho, J. C..

6 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Low temperature phase formation of Tl-based superconducting thin films in reduced oxygen atmosphere

Tl-Ba-Cu-Cu-O superconducting thin films were prepared by magnetron sputtering with postannealing in a reduced oxygen atmosphere. Single-phase Tl2Ba2Ca2Cu3O(x) can form on the MgO substrate at 800 C under P(O2) about 0.1 atm. However the phase formation temperature can be affected by the starting composition of the film. Tl1Ba2Ca2Cu3O(x) phase can be formed by simply lowering the Tl2O pressure. The thermal stability of Tl1Ba2Ca2Cu3O(x) phase was studied by resistivity measurements at high temperatures.

Wu, C. Y.↗
NASA NTRS1979

Properties and performance of fine-filament bronze-process Nb3Sn conductors

Fine-filament bronze-process Nb3Sn superconductors were fabricated to fulfill stringent requirements on critical current under tension in a one-inch bend diameter, current density, stability, and conductor losses. A large fraction of niobium filaments was incorporated in a bronze matrix, and a cable containing 4453 2-micron diameter filaments in each of six strands provided a current density of 85,000 A/sq cm at 10 to the -11th ohm-cm, 10 T, and 4.2 K. The next step was to incorporate copper stabilizer in a conductor with 20,538 filaments. These conductors, fabricated so that bend strains of about 1% would be experienced by the filaments in the one-inch bend, stably carried currents in the 200-500 A range. A quench current of 540 A in a 5-cm bend corresponds to 158,000 A/sq cm in the bronze and filament area, believed to be the highest critical current density reported for multifilamentary Nb3Sn.

Walker, M. S.↗
NASA NTRS1978

Response of defects to illumination in silicon solar cells

The enhancement of diffusion length with intensity was examined using spectral response measurements in solar cells based on Silso silicon and EFG silicon ribbon. Local diffusion length variations at defect sites were investigated as a function of illumination level using a scanning electron microscope operated in the electron beam induced current mode. An increase of diffusion length was observed at defect sites as the intensity level was increased. The diffusion length improvements are explained on the basis of saturation of minority carrier traps in these materials. The trap distribution in Silso silicon is shown to be peaked near (Ec - 0.7)eV. EFG silicon ribbon shows a broad, Gaussian distribution of traps located near (Ec - 0.5)eV.

Hari Rao, C. V.↗