Search NASA⌕ Search

Engineering topics

Ho, Seng-Tiong

Publications and source records attributed to Ho, Seng-Tiong.

3 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Study of an Integration Platform Based on an Adiabatic Active-Layer Waveguide Connection for InP Photonic Device Integration Mirroring That of Heterogeneous Integration on Silicon

In this work, a photonic device integration platform capable of integration of active-passive InP-based photonic devices without the use of material regrowth is introduced. The platform makes use of an adiabatic active-layer waveguide connection (ALWC) to move an optical beam between active and passive devices. The performance of this platform is analyzed using an example made up of four main sections: (1) a fiber coupling section for enabling vertical beam coupling from optical fiber into the photonic chip using a mode-matched surface grating with apodized duty cycles; (2) a transparent waveguide section for realizing passive photonic devices; (3) an adiabatic mode connection structure for moving the optical beam between passive and active device sections; and (4) an active device section for realizing active photonic devices. It is shown that the coupled surface grating, when added with a bottom gold reflector, can achieve a high chip-to-fiber coupling efficiency (CE) of 88.3% at 1550 nm. The adiabatic active-layer mode connection structure has an optical loss of lower than 1% (CE > 99%). The active device section can achieve an optical gain of 20 dB/mm with the use of only 3 quantum wells. The optimized structural parameters of the entire waveguide module are analyzed and discussed.

42 ENGINEERING↗
NASA NTRS2010

Near-field nano-imager

An imaging device. In one embodiment, the imaging device includes a plurality of first electrode strips in parallel to each other along a first direction x, wherein each first electrode strip has an elongated body with a first surface and an opposite, second surface and a thickness n.sub.1. The imaging device also includes a plurality of second electrode strips in parallel to each other along a second direction y that is substantially perpendicular to the first direction x, wherein each second electrode strip has an elongated body with a first surface and an opposite, second surface and a thickness n.sub.2. The plurality of second electrode strips are positioned apart from the plurality of first electrode strips along a third direction z that is substantially perpendicular to the first direction x and the second direction y such that the plurality of first electrode strips and the plurality of second electrode strips are crossing each other accordingly to form a corresponding number of crossing points. And at each crossing point, a semiconductor component is filled between the second surface of a corresponding first electrode strip and the first surface of a corresponding second electrode strip to form an addressable pixel.

Liu, Boyang↗