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Holland, Stephen E.

Publications and source records attributed to Holland, Stephen E..

Multi-amplifier Sensing Charge-coupled Devices for Next Generation Spectroscopy

We present characterization results and performance of a prototype Multiple-Amplifier Sensing (MAS) silicon charge-coupled device (CCD) sensor with 16 channels potentially suitable for faint object astronomical spectroscopy and low-signal, photon-limited imaging. The MAS CCD is designed to reach sub-electron readout noise by repeatedly measuring charge through a line of amplifiers during the serial transfer shifts. Using synchronized readout electronics based on the Dark Energy Spectroscopic Instrument CCD controller, we report a read noise of 1.03 e$^{−}$ rms pix$^{−1}$ at a speed of 26 μs pix$^{−1}$ with a single-sample readout scheme where charge in a pixel is measured only once for each output stage. At these operating parameters, we find the amplifier-to-amplifier charge transfer efficiency (ACTE) to be >0.9995 at low counts for all amplifiers but one for which the ACTE is 0.997. This charge transfer efficiency falls above 50,000 electrons for the read-noise optimized voltage configuration we chose for the serial clocks and gates. The amplifier linearity across a broad dynamic range from ∼300 to 35,000 e$^{−}$ was also measured to be ±2.5%. We describe key operating parameters to optimize on these characteristics and describe the specific applications for which the MAS CCD may be a suitable detector candidate.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Readout optimization of multi-amplifier sensing charge-coupled devices for single-quantum measurement

The non-destructive readout capability of the Skipper Charge Coupled Device (CCD) has been demonstrated to reduce the noise limitation of conventional silicon devices to levels that allow single-photon or single-electron counting. The noise reduction is achieved by taking multiple measurements of the charge in each pixel. These multiple measurements come at the cost of extra readout time, which has been a limitation for the broader adoption of this technology in particle physics, quantum imaging, and astronomy applications. This work presents recent results of a novel sensor architecture that uses multiple non-destructive floating-gate amplifiers in series to achieve sub-electron readout noise in a thick, fully-depleted silicon detector to overcome the readout time overhead of the Skipper-CCD. This sensor is called the Multiple-Amplifier Sensing Charge-Coupled Device (MAS-CCD) can perform multiple independent charge measurements with each amplifier, and the measurements from multiple amplifiers can be combined to further reduce the readout noise. We will show results obtained for sensors with 8 and 16 amplifiers per readout stage in new readout operations modes to optimize its readout speed. The noise reduction capability of the new techniques will be demonstrated in terms of its ability to reduce the noise by combining the information from the different amplifiers, and to resolve signals in the order of a single photon per pixel. The first readout operation explored here avoids the extra readout time needed in the MAS-CCD to read a line of the sensor associated with the extra extent of the serial register. The second technique explore the capability of the MAS-CCD device to perform a region of interest readout increasing the number of multiple samples per amplifier in a targeted region of the active area of the device.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Search by the SENSEI Experiment for Millicharged Particles Produced in the NuMI Beam

Millicharged particles appear in several extensions of the standard model, but have not yet been detected. These hypothetical particles could be produced by an intense proton beam striking a fixed target. We use data collected in 2020 by the SENSEI experiment in the MINOS cavern at the Fermi National Accelerator Laboratory to search for ultrarelativistic millicharged particles produced in collisions of protons in the NuMI beam with a fixed graphite target. The absence of any ionization events with 3 to 6 electrons in the SENSEI data allow us to place world-leading constraints on millicharged particles for masses between 30 to 380 MeV. This work also demonstrates the potential of utilizing low-threshold detectors to investigate new particles in beam-dump experiments, and motivates a future experiment designed specifically for this purpose. Published by the American Physical Society 2024

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Astronomical Spectroscopy with Skipper CCDs: First Results from a Skipper CCD Focal Plane Prototype at SIFS

We present the first on-sky results from an ultra-low-readout-noise Skipper CCD focal plane prototype for the SOAR Integral Field Spectrograph (SIFS). The Skipper CCD focal plane consists of four 6k x 1k, 15 $\mu$m pixel, fully-depleted, p-channel devices that have been thinned to ~250 $\mu$m, backside processed, and treated with an anti-reflective coating. These Skipper CCDs were configured for astronomical spectroscopy, i.e., single-sample readout noise < 4.3 e- rms/pixel, the ability to achieve multi-sample readout noise $\ll$ 1 e- rms/pixel, full-well capacities ~40,000-65,000 e-, low dark current and charge transfer inefficiency (~2 x 10$^{-4}$ e-/pixel/s and 3.44 x 10$^{-7}$, respectively), and an absolute quantum efficiency of $\gtrsim$ 80% between 450 nm and 980 nm ($\gtrsim$ 90% between 600 nm and 900 nm). We optimized the readout sequence timing to achieve sub-electron noise (~0.5 e- rms/pixel) in a region of 2k x 4k pixels and photon-counting noise (~0.22 e- rms/pixel) in a region of 220 x 4k pixels, each with a readout time of $\lesssim$ 17 min. We observed two quasars (HB89 1159+123 and QSO J1621-0042) at redshift z ~ 3.5, two high-redshift galaxy clusters (CL J1001+0220 and SPT-CL J2040-4451), an emission line galaxy at z = 0.3239, a candidate member star of the Bo\"{o}tes II ultra-faint dwarf galaxy, and five CALSPEC spectrophotometric standard stars (HD074000, HD60753, HD106252, HD101452, HD200654). We present charge-quantized, photon-counting observations of the quasar HB89 1159+123 and show the detector sensitivity increase for faint spectral features. We demonstrate signal-to-noise performance improvements for SIFS observations in the low-background, readout-noise-dominated regime. We outline scientific studies that will leverage the SIFS-Skipper CCD data and new detector architectures that utilize the Skipper floating gate amplifier with faster readout times.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

charged coupled devices (CCDs)↗

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 °C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices ((CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

Nikzad, Shouleh↗