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Holloway, P. H.

Publications and source records attributed to Holloway, P. H..

11 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Effect of ion sputtering on interface chemistry and electrical properties of Au GaAs(100) Schottky contacts

The effects of sputtering n-type (100)GaAs with 1 to 5 keV argon ions have been studied in ultrahigh vacuum. Auger electron and X-ray photoelectron spectroscopies have been used to characterize the surface before and after sputtering. Gold Schottky contacts were prepared in situ to avoid contamination at the metal/semiconductor interface. The data show that sputtering depletes the surface in As, and the extent of depletion increased as the ion energy was increased. However, angular-resolved photoelectron data showed As was enriched on the outer atom layer by 5 keV but depleted by 1 keV Ar(+) sputtering. Current and capacitance versus voltage data showed that sputtering always lowered the Schottky barrier height and generally increased the ideality factor. However, the barrier height after 3 keV sputtering was higher than after 1 keV sputtering. Those effects are explained based on a combined effective work function model and creation of a donorlike surface damage layer. The donor layer was correlated with As depletion by sputtering. Deep level trap formation and annealing of sputtering effects were studied.

Wang, Y.-X.↗
NASA NTRS1984

Ohmic Versus Rectifying Contacts of Au to N-gaas by Ion Sputtering

Results of investigations of argon ion sputtering of heavily doped n-GaAs are compared with those obtained from studies of Au/low doping density n-GaAs contacts. The Au contact on Si-doped GaAs was nearly ohmic when the surface contamination (carbon and oxides) was reduced prior to deposition by chemical cleaning. However, when ion sputtering was used in situ to clean the surface, rectifying contact was produced whose barrier height varied with the energy of the sputtering ion. It was found that ion sputtering of GaAs doped to more than 3 x 10 to the 18th power/cu may be used to change ohmic contact to rectifying contacts. The barrier height may be changed by changing the ion energy. The behavior results from the sputter creation of deep level acceptor states at the GaAs surface. Annealing after sputtering can restore the contact to nearly an ohmic character.

Wang, Y. X.↗
NASA NTRS1984

Magnetron Sputtered Gold Contacts on N-gaas

Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

Buonaquisti, A. D.↗
NASA NTRS1984

Effect of Ion Sputtering on Interface Chemistry and Electrical Properties of an Gaas (100) Schottky Contacts

Auger and electron photoelectron spectroscopy were used to measure the extent of As depletion during 1 keV to 5 keV argon sputtering of GaAs surfaces. This depletion was correlated with a general decrease in the barrier height of the rectifying Au contact deposited in situ. However, nondestructive angle resolved XPS measurements showed As was depleted at the outer surface more by 1 keV than 3 keV argon. These effects are explained based on a combined work effective work function model and creation of a donor like surface damage layer. The donor layer was correlated with As depletion by sputtering. Deep level trap formation and annealing of sputtering effects were studied.

Wang, Y. X.↗
NASA NTRS1983

Interfacial chemistry of electrical contacts on GaAs and Al0.3Ga0.7As

Thermal restructuring of oxides of GaAs and Al0.3Ga0.7As substrates has been studied using Auger electron spectroscopy and both neutral and secondary ion mass spectrometry. The oxide underwent restructuring at temperature of at least 250 C while gallium oxides desorbed at temperatures depending upon the type of oxide. Reoxidation at low oxygen pressures resulted in surface oxygen species different from those in native oxides. These species desorbed at about 520 C while native oxides desorbed at 600 C. Carbon-containing contaminants did not desorb. The implications of these results for electrical contacts are discussed.

Buonaquisti, A. D.↗
NASA NTRS1972

A versatile substrate design for LEED and AES studies in uhv.

A substrate design is described that incorporates a single crystal disk into an electrically isolated, electron bombardment heated mount. Electron and photon leakage from the bombarding filament are prevented, and LEED and AES may be used at elevated temperatures. A cold finger, thermally coupled to the mount, decreases the time lost between cleaning the crystal and cooling it to the desired observation temperature. The cold finger also allows observation at temperatures below ambient.

Holloway, P. H.↗