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Hong, K. H.

Publications and source records attributed to Hong, K. H..

Absence of moment fragmentation in the mixed B -site pyrochlore Nd 2 GaSbO 7

Nd-based pyrochlore oxides of the form Nd 2 GaSbO 7 have garnered a significant amount of interest owing to the moment fragmentation physics observed in Nd 2 GaSbO 7 and speculated in Nd 2 GaSbO 7 . Notably this phenomenon is not ubiquitous in this family, as it is absent in Nd 2 GaSbO 7 , which features a smaller ionic radius on the B site. Here, we explore the necessary conditions for moment fragmentation in the Nd pyrochlore family through a detailed study of the mixed B-site pyrochlore Nd 2 GaSbO 7 . Furthermore, the B site of this system is characterized by significant disorder and an extremely small average ionic radius. Similarly to Nd 2 GaSbO 7 , we find no evidence for moment fragmentation through our bulk characterization and neutron scattering experiments, indicating that chemical pressure (and not necessarily the B-site disorder) plays a key role in the presence or absence of this phenomenon in this material family. Surprisingly, the presence of significant B-site disorder in Nd 2 GaSbO 7 does not generate a spin-glass ground state and instead the same all-in-all-out magnetic order identified in other Nd pyrochlores is found here.

36 MATERIALS SCIENCE↗

Dynamical ground state in the XY pyrochlore Yb2GaSbO7

Abstract The magnetic ground state of the pyrochlore Yb 2 GaSbO 7 has not been established. The persistent spin fluctuations observed by muon spin-relaxation measurements at low temperatures have not been adequately explained for this material using existing theories for quantum magnetism. Here we report on the synthesis and characterisation of Yb 2 GaSbO 7 to revisit the nature of the magnetic ground state. Through DC and AC magnetic susceptibility, heat capacity, and neutron scattering experiments, we observe evidence for a dynamical ground state that makes Yb 2 GaSbO 7 a promising candidate for disorder-induced spin-liquid or spin-singlet behaviour. This state is quite fragile, being tuned to a splayed ferromagnet in a modest magnetic field μ 0 H c ~ 1.5 T.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High temperature properties of GaAlAs/GaAs heteroface solar cells

The properties of p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells were determined in the temperature range from 25 C to 350 C. Illumination air mass zero (AM0) current-voltage measurements show that the short circuit current increases as a function of temperature up to 210 C and then decreases up to 350 C. The open circuit voltage and fill factor decrease linearly with increasing temperature. The spectral response shifts toward higher wavelengths with increasing temperature.

Walker, G. H.↗

Long-term temperature effects on GaAs solar cells

The thermal degradation of AlGaAs solar cells resulting from a long-term operation in a space environment is investigated. The solar cell degradation effects caused by zinc and aluminum diffusion as well as deterioration by arsenic evaporation are presented. Also, the results are presented of experimental testing and measurements of various GaAs solar cell properties while the solar cell was operating in the temperature range of 27 C to 350 C. In particular, the properties of light current voltage curves, dark current voltage curves, and spectral response characteristics are given. Finally, some theoretical models for the annealing of radiation damage over various times and temperatures are included.

Heinbockel, J. H.↗