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Housley, Catherine

Publications and source records attributed to Housley, Catherine.

Structure and properties of NdCuGa 3 single crystals

Here this manuscript reports on the structural and magnetic properties of NdCuGa 3 using powder and single crystal X-ray diffraction (XRD), zero-field single crystal neutron diffraction, magnetization, and specific heat measurements. Our XRD on a single crystal specimen of NdCuGa3 confirmed that it crystallizes in the tetragonal BaNiSi 3 -type structure. A magnetic phase transition at T N = 3.3 K is assessed using specific heat and ac magnetic susceptibility measurements. No additional anomaly below T N down to 50 mK was detected by performing specific heat measurements. Neutron single crystal diffraction data collected at T = 300 mK confirm the antiferromagnetic phase below T N = 3.3 K with the propagation vector $\vec{\tau}$ = (0.2, 0, 0). Possible magnetic structure solutions of NdCuGa 3 are discussed

36 MATERIALS SCIENCE↗

Simulated Aging of Metal Tritides by Ball Milling Induced Gas Incorporation

The study of tritium aging effects on materials requires a significant time commitment as a consequence of its 12.3-year half-life, making developmental studies prohibitively difficult and expensive. However, detailed knowledge of long-term aging effects is critical to the development of structural and storage materials for future fusion reactor technologies. As a result, multiple approaches to simulated aging effects have been investigated. Here, we report a method of simulated tritium aging achieved though the incorporation of trapped gases via high-energy ball milling of LaNi 4.25 Al 0.75 alloy storage material. Experimental results verify the presence of trapped gases by a combination of temperature programmed desorption and LECO chemical analysis. Following gas incorporation, we find that many of the degraded hydrogen sorption properties found in aged storage materials are reproduced by the ball milled powders.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Growth and Development of Quantum Materials

Topological insulators (TIs) display a new state of quantum matter, which is broadly known as quantum materials. The TIs have a unique property of being an insulator as a bulk property and having conducting surface states, which are symmetry-protected Dirac Fermions and well isolated from the bulk valence and conduction bands. Ideally, these topological surface states and bulk electronic states should act independently. The degree to which they intermix depends on the crystalline quality, composition and defects present in the material. These materials thus demand very high-quality crystals to observe the desired quantum properties. We proposed growth of high-quality single crystals and thin films to enhance the ability to fabricate devices with unique performance attributes. Two separate approaches will be made to make the thin films, one is exfoliation of 2D monolayer from the grown single crystals and the second is thin films grown by pulsed laser deposition. Both techniques will subsequently allow for fabrication of meso structures using a Focused Ion Beam technique.

36 MATERIALS SCIENCE↗