Engineering topics

Howard, Sebastian A.

Publications and source records attributed to Howard, Sebastian A..

3 records

DOE OSTI2021

Digital Tuning of the Transition Temperature of Epitaxial VO 2 Thin Films on MgF 2 Substrates by Strain Engineering

Abstract Straining the vanadium dimers along the rutile c ‐axis can be used to tune the metal‐to‐insulator transition (MIT) of VO 2 but has thus far been limited to TiO 2 substrates. In this work VO 2 /MgF 2 epitaxial films are grown via molecular beam epitaxy (MBE) to strain engineer the transition temperature ( T MIT ). First, growth parameters are optimized by varying the synthesis temperature of the MgF 2 (001) substrate ( T S ) using a combination of X‐ray diffraction techniques, temperature dependent transport, and soft X‐ray photoelectron spectroscopy. It is determined that T S values greater than 350 °C induce Mg and F interdiffusion and ultimately the relaxation of the VO 2 layer. Using the optimized growth temperature, VO 2 /MgF 2 (101) and (110) films are then synthesized. The three film orientations display MITs with transition temperatures in the range of 15–60 °C through precise strain engineering.

Howard, Sebastian A.↗

DOE OSTI2021

Structural Phase Transitions of NbO 2 : Bulk versus Surface

The metal to insulator transition of NbO 2 has been predicted to be a result of a structural phase transition (SPT) governed by Peierls physics. However, direct observation of the SPT using experimental techniques is still restricted by the extremely high transition temperature (810 °C) and the proclivity for NbO 2 to oxidize into Nb 2 O 5 above 400 °C when exposed to air. In this work, we address these issues and employ temperature-dependent X-ray spectroscopy to describe the SPT of NbO 2 from the bulk to surface. Temperature-dependent extended X-ray absorption fine structure spectroscopy (T-EXAFS) reveals a gradual weakening of the bulk Nb dimers over a large temperature range, which is indicative of a second-order Peierls mechanism. From these measurements, we determine the critical dimer distance to be 2.77 Å. Our T-EXAFS observations are supported by density functional theory of the phonon dispersion and the electronic density of states of NbO 2 , which conclude that the dimerization is responsible for the insulating phase. The dimerization does not extend to the topmost layers, where an oxygen rich surface reconstruction is preferred irrespective of temperature even in extremely reducing environments; changes in the low-energy electron diffraction patterns are attributed to oxygen concentration and are independent of the underlying bulk phase transitions of NbO 2 .

36 MATERIALS SCIENCE↗

DOE OSTI2020

Directly measuring the structural transition pathways of strain-engineered VO 2 thin films

Epitaxial films of vanadium dioxide (VO 2 ) on rutile TiO 2 substrates provide a means of strain-engineering the transition pathways and stabilizing of the intermediate phases between monoclinic (insulating) M1 and rutile (metal) R end phases. In this work, we investigate structural behavior of epitaxial VO 2 thin films deposited on isostructural MgF 2 (001) and (110) substrates via temperature-dependent Raman microscopy analysis. The choice of MgF 2 substrate clearly reveals how elongation of V–V dimers accompanied by the shortening of V–O bonds triggers the intermediate M2 phase in the temperature range between 70–80 °C upon the heating–cooling cycles. Consistent with earlier claims of strain-induced electron correlation enhancement destabilizing the M2 phase our temperature-dependent Raman study supports a small temperature window for this phase. The similarity of the hysteretic behavior of structural and electronic transitions suggests that the structural transitions play key roles in the switching properties of epitaxial VO 2 thin films.

36 MATERIALS SCIENCE↗