Engineering topics
Hsu, Chia-Hsiu
Publications and source records attributed to Hsu, Chia-Hsiu.
Observation of a van Hove singularity of a surface Fermi arc with prominent coupling to phonons in a Weyl semimetal
A van der Waals coupled Weyl semimetal NbIrTe 4 is investigated by combining scanning tunneling microscopy/spectroscopy and first-principles calculations. Here we observe a sharp peak in the tunneling conductance near the Fermi energy (E F ). Comparison with calculations indicates that the peak originates from a van Hove singularity (vHs) associated with a Lifshitz transition of the surface Fermi-arc state. Interestingly, our tunneling spectroscopy also shows signatures of strong electron-boson coupling. This is potentially due to an anomalously enhanced charge susceptibility coming from the near-E F vHs formation.
Quantum anomalous Hall insulator phases in Fe-doped GaBi honeycomb
We discuss electronic and magnetic properties of the Fe-doped GaBi honeycomb using first principles calculations. Our analysis shows that the pristine GaBi honeycomb transitions from being a two-dimensional quantum spin Hall (QSH) insulator to a quantum anomalous Hall (QAH) insulator when it is doped with one Fe atom in a 4 × 4 GaBi honeycomb. Additionally, the QAH phase in Fe-doped GaBi is found to be robust in that it maintains its Chern number (C = 1) under fairly large strains (~ 4%) and supports a gap as large as 112 meV at 2.21% strain. The QAH phase is also retained when the Fe-doped GaBi is placed on a CdTe substrate, suggesting that Fe-doped GaBi films could be useful for spintronics applications.
Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe 2 Films
Platinum ditelluride (PtTe2), a type-II Dirac semimetal, remains semimetallic in ultrathin films down to just two tri-atomic layers (TLs) with a negative gap of -0.36 eV. Further reduction of the film thickness to a single TL induces a Lifshitz electronic transition to a semiconductor with a large positive gap of +0.79 eV. This transition is evidenced by experimental band structure mapping of films prepared by layer-resolved molecular beam epitaxy, and by comparing the data to first-principles calculations using a hybrid functional. The results demonstrate a novel electronic transition at the two-dimensional limit through film thickness control.