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Hu, Boxue

Publications and source records attributed to Hu, Boxue.

Multiscale Electrothermal Design of a Modular Multilevel Converter for Medium-Voltage Grid-Tied Applications

As a key feature of modular multilevel converters (MMCs), a large number of semiconductor devices are employed in the converter and distributed over a stack of submodules. Each submodule has a strict temperature limit that imposes constraints on the operating range of the converter. Different loading conditions/losses in the submodules lead to unavoidable temperature variations inside the MMC, which consequently affect the system-level performance and reliability. This paper is focused on the electrothermal analysis and design of a medium-voltage silicon carbide (SiC)-based MMC system, from submodule power semiconductors to the overall MMC system integration of multiple submodules, for grid-connected applications. Loss calculations are performed to estimate the cooling requirements and aid thermal design at different levels. The performance of a forced-air cooling approach is analyzed within a numerical modeling framework. Maximum temperature of the SiC power modules is predicted using numerical tools. Thermal design of the MMC cabinet with various arrangements of air inlet(s) and outlet(s) is investigated and compared from a cooling performance perspective. A fully resolved model of the arrangement that yields optimal results is developed to accurately predict the temperature profile of the essential components in the submodules.

computational fluid dynamics↗

Hardware Design of Medium Voltage SiC-Based Modular Multilevel Converters for Grid-Tied Applications

This paper presents a design of a 10 kV silicon carbide (SiC) MOSFET based modular multilevel converter (MMC). The MMC functions as the interconnection between a 24 kV dc bus and a 13. SkV distribution grid. This paper focuses on the hardware design of the MMC and its submodules. The gate driver, auxiliary power supply and bus bur in submodules are major components that need to meet high dv/dt immunity and high insulation voltage requirements. The gate driver achieves over 200 kV/us common mode transient immunity (CMTI). Its associated auxiliary power supply is based on an on-board transformer with over 30 kV insulation capability and 1.4 pF barrier capacitance. The busbar achieves less than 11 kV/cm electric field in the air to avoid partial discharges. Validation tests of the MMC submodule were performed by double pulse tests at 5 kV and buck converter tests at3 kV, 52A (peak). Reliable operations were achieved in validation tests.

auxiliary power supply↗