Engineering topics

Hu, Robert

Publications and source records attributed to Hu, Robert.

4 records

DOE OSTI2024

Frontier system-on-chip (SoC) technology for microwave diagnostics (invited)

The next generation of fusion reactors, exemplified by projects such as the Demonstration Power Plant following the International Thermonuclear Experimental Reactor, faces the monumental challenge of proving the viability of generating electricity through thermonuclear fusion. This pursuit introduces heightened complexities in diagnostic methodologies, particularly in microwave-based diagnostics. The increased neutron fluence necessitates significant reductions in vessel penetrations and the elimination of internal diagnostics, posing substantial challenges. SoC technology offers a promising solution by enabling the miniaturization, modularization, integration, and enhancing the reliability of microwave systems. After seven years of research, our team successfully pioneered the V- and W-band system-on-chip approach, leading to the development of active transmitters and passive receiver modules applied in practical settings, notably within the DIII-D tokamak project. Arrays of these modules have supported microwave imaging diagnostics. New physics measurement results from the Electron Cyclotron Emission Imaging system on DIII-D provide compelling evidence of improved diagnostics following the adoption of SoC technology. Furthermore, we achieved a breakthrough in developing an F-band SoC, advancing higher frequency capabilities for fusion devices. These achievements represent a significant leap forward in fusion diagnostic technology, marking substantial progress toward establishing reliable and efficient plasma diagnostics for future fusion reactors.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2024

GaN-based W-band receiver chip development for fusion plasma diagnostics

Millimeter-wave diagnostics have proven effective on various magnetic fusion devices worldwide, yet the formidable challenges posed by the harsh environments of future burning plasma devices, characterized by extreme temperatures, pressures, and radiation levels, remain a significant hurdle. To address these challenges, the utilization of wide bandgap Gallium Nitride (GaN)-based millimeter-wave diagnostics is a most promising solution for fusion reactor safety monitoring and control. A noteworthy W-band GaN-based system-on-chip receiver has been the demonstrated by employing HRL T3 40 nm GaN technology. This receiver chip, compactly designed with dimensions of 3 × 5 mm 2 , incorporates essential components such as the 75–110 GHz RF Low-Noise Amplifier (LNA), mixer, Intermediate Frequency (IF) amplifier, and Local Oscillator (LO) chain. This receiver chip will be packaged as a millimeter-wave receiver module and applied on the DIII-D National Fusion Facility, for fusion plasma edge shape monitoring for operational safety and dangerous disruption prediction. The laboratory measurement results have demonstrated suitable performance. Furthermore, this advancement is pivotal for accurate analysis of plasma behavior in the extreme conditions of burning plasma devices, driving progress in fusion research and technology.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

NASA NTRS2004

A Wide-Bandwidth, Low-Noise SIS Receiver Design for Millimeter and Submillimeter Wavelengths

In principle, millimeter and submillimeter heterodyne receivers using state-of-the-art SIS detectors are capable of extremely large instantaneous bandwidths with noise temperatures within a few Kelvin of the quantum limit. We are applying modem design tools, such as 3D electromagnetic simulators and Caltech's SuperMix SIS analysis package, to develop a new generation of waveguide SIS mixers with very broad RF and IF bandwidths. Our initial design consists of a double-sideband mixer targeted for the 180- 300 GHz band that uses a single SIS junction excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output band, limited by the MMIC low-noise IF preamplifier, is 6-18 GHz, providing an instantaneous RF bandwidth of 24 GHz (double-sideband). The SIS mixer conversion loss is predicted to be no more than 1-2 dB (single-sideband) with mixer noise temperatures across the band within 10 Kelvin of the quantum limit. The single-sideband receiver noise temperature goal is 70 Kelvin. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical observations beyond the capabilities of current instruments. Lab testing of the receiver will begin in the summer of 2002, and a demonstration on the CSO should occur in the spring of 2003.

Sumner, Matthew↗

NASA NTRS2002

An Extremely Wide Bandwidth, Low-Noise SIS Heterodyne Receiver Design for Millimeter and Submillimeter Observations

Millimeter and submillimeter heterodyne receivers using state-of-the-art SIS detectors are capable of extremely large instantaneous bandwidths with noise temperatures within a few Kelvin of the quantum limit. We present the design for a broadband, sensitive, heterodyne spectrometer under development for the Caltech Submillimeter Observatory (CSO). The 180-300 GHz double-sideband design uses a single SIS device excited by a full bandwidth, fixed-tuned waveguide probe on a silicon substrate. The IF output frequency (limited by the MMIC low noise IF preamplifier) is 6-18 GHz, providing an instantaneous RF bandwidth of 24 GHz (double-sideband). The SIS mixer conversion loss should be no more than 1-2 dB with mixer noise temperatures across the band within 10 K of the quantum limit. The single-sideband receiver noise temperature goal is 70 K. The wide instantaneous bandwidth and low noise will result in an instrument capable of a variety of important astrophysical observations beyond the capabilities of current instruments. Lab testing of the receiver will begin in the summer of 2002, and the first use on the CSO should occur in the spring of 2003.

Sumner, Matthew↗