Engineering topics

Huang, C.

Publications and source records attributed to Huang, C..

22 records · Page 2

NASA NTRS1985

Cold streams of ionospheric oxygen in the plasma sheet during the CDAW 6 event of March 22, 1979

During magnetospheric substorm events, the plasma and ion composition experiments in the ISEE-1 and 2 satellites detected cold ionospheric O+ streams, moving tailwards in the near earth magnetotail. Flow is parallel to the magnetic field lines, with drift velocity in agreement with the electric field topology obtained by mapping the model ionospheric field along the magnetic field lines. Fluctuations of the flow velocity of the streams can be related to magnetotail movements. Oscillations of the flow direction and speed with periods ranging from 5 to 10 min that suggest the presence of waves are observed. The streams are observed at all distances between 15 and 6 Re from the earth. When averaged over 360 deg, the streams show up as a low energy peak, superimposed on the distribution of isotropic plasma sheet ions. This double-peak structure of the energy spectrum seems typical of the disturbed plasma sheet.

Orsini, S.↗

NASA NTRS1976

Two-electron bond-orbital model, 2

The two-electron bond-orbital model of tetrahedrally-coordinated solids is generalized and its application extended. All intrabond matrix elements entering the formalism are explicitly retained, including the direct overlap S between the anion and cation sp3 hybrid wavefunctions. Complete analytic results are obtained for the six two-electron eigenvalues and eigenstates of the anion-cation bond in terms of S, one-electron parameters V2 and V3, and two-electron correlation parameters V4, V5 and V6. Refined formulas for the dielectric constant and the nuclear exchange and pseudodipolar coefficients, as well as new expressions for the valence electron density, polarity of the bond and the cohesive energy, are then derived. The theory gives a good account of the experimentally observed trends in all properties considered and approximate quantitative agreement is achieved for the pseudodipolar coefficient.

Huang, C.↗

NASA NTRS1975

Two-electron bond-orbital model. I

The one-electron bond-orbital model of Harrison (1973) for tetrahedrally coordinated solids is modified to a two-electron model using a generalization of Falicov and Harris' (1969) method for treating the hydrogen molecule. Expressions for nuclear-exchange and pseudodipolar interactions are obtained in terms of bond-orbital model parameters. The eigenfunctions and eigenvalues of the Hamiltonian are employed along with standard perturbation theory to calculate the energy shifts resulting from the application of an external electric field and induced by the magnetic interaction between the nuclear spins and the bond-electron spins. The quantitative predictions of the derived formulas are examined for real semiconductors involving elements and compounds from periodic groups III, IV, and V. It is concluded that the present two-electron model makes it possible to assess the quantitative effects of electron correlation in the anion-cation bond for both nonmagnetic properties (electric susceptibility, dielectric constant) and magnetic properties (nuclear-exchange and pseudodipolar interactions) of various materials.

Huang, C.↗

NASA NTRS1975

Two-electron bond-orbital model, 1

Harrison's one-electron bond-orbital model of tetrahedrally coordinated solids was generalized to a two-electron model, using an extension of the method of Falicov and Harris for treating the hydrogen molecule. The six eigenvalues and eigenstates of the two-electron anion-cation Hamiltonian entering this theory can be found exactly general. The two-electron formalism is shown to provide a useful basis for calculating both non-magnetic and magnetic properties of semiconductors in perturbation theory. As an example of the former, expressions for the electric susceptibility and the dielectric constant were calculated. As an example of the latter, new expressions for the nuclear exchanges and pseudo-dipolar coefficients were calculated. A simple theoretical relationship between the dielectric constant and the exchange coefficient was also found in the limit of no correlation. These expressions were quantitatively evaluated in the limit of no correlation for twenty semiconductors.

Huang, C.↗