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Hunt, Charles E.

Publications and source records attributed to Hunt, Charles E..

5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Dopant Sensitive Electrolytic Etching of Germanium with High Selectivity

Abstract The enhanced charge carrier mobility and photon absorption compared to silicon make germanium attractive for next-generation photo diodes. However, the complex oxidation behavior of germanium challenges dopant-dependent selective etching that is desired for the fabrication of backside imaging architectures. This report demonstrates electrolytic wet etching of p-doped germanium which proceeds up to 17,500x faster than etching of intrinsic germanium. Homoepitaxially grown layers of germanium were electrolytically etched in potassium hydroxide over a range of biases. Intermittent acquisition of cyclic voltammetry spectra during etching has suppressed the formation of electric double layers, maintained appreciable etch rates, and allowed for in operando process control. The observed etch rates scaled with dopant concentration. An effective etch rate of germanium removal of 2.100±0.044 µm/min was accomplished for a boron dopant concentration of 6E18cm-3. For nominally intrinsic germanium, however, an effective etch rate of only 0.00012±0.00011 µm/min was observed. A series of systematic electrolytic etch experiments have revealed the transfer of 4 electrons per germanium atom removed.

Wood, Joseph G.↗
DOE OSTI2024

Communication—Controlling Etching of Germanium through Surface Charge Manipulation

Potassium hydroxide (KOH) aqueous solutions can effectively etch germanium. Etch rates were determined in an electrolytic etch cell. Electrically isolated Ge wafers were subject to an etch rate of 1.45 ± 0.07 nm min −1 , increasing to 12.6 ± 0.2 nm min −1 when grounded, 97 ± 2 nm min −1 when biased at −0.9 V, and 138 ± 2 nm min −1 with periodic biasing. Results suggest that the previously reported limited etching in KOH is associated with the recombination of holes with electrons injected from the surface reaction. The results of this study demonstrate that changing the hole concentration through biasing is an effective tool to control electrolytic etch rates, enabling future selective etching processes for germanium.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Geranium Photodiodes for Hard Xray Detection

This report summarizes the investigations engaged at UC Davis under subcontract B632083, as related to the LLNL-LDRD Project “High-Speed X-Ray Imager Arrays.” The first section entails work done within the Electrical and Computer Engineering (ECE) Department. The purpose of the work done so far is to understand photodiode design and which parameters are conducive to the design goals, which are: I: Maximize the detector quantum efficiency. The device must have a quantum efficiency of roughly 5% at 80 keV. II: Minimize temporal response. Collection time is limited to 1ns. All charge must be collected in that time. III: Minimize dark current. In this document, various photodiode parameters and designs are explored, and their impact on these goals are tabulated. In addition to these, various instruments that have been constructed for either testing these parameters or helping teammates with their experiments. The second section entails work done with the Materials Science Engineering (MSE) Department. In accordance with the proposed development of the germanium ROIC backside imagers, a critical step in the micromachining of these devices was the removal of the substrate on which the PIN junctions were epitaxially grown. A common technique for the micromachining of silicon wafers is the use of chemical etching alongside an “etch-stop” layer. In this technique, a chemical etchant will remove material until it reaches the etch-stop layer, at which the etch rate will drop significantly. This high selectivity (ratio of etch rates) allows any unevenness in the initial etching to be effectively smoothed away in the event that part of the wafer surface reaches the etch-stop layer sooner than another. An initial literature review found a paper by Divan et al. in which the authors used ion implantation to dope germanium wafers and achieve selectivity on the order of 100, sufficient for a reliable etch-stop.

42 ENGINEERING↗
DOE OSTI2021

p-i-n High-Speed Photodiodes for X-RAY and Infrared Imagers Fabricated by In-Situ -Doped APCVD Germanium Homoepitaxy

Design, simulation, fabrication, and measurement have been performed using a new method for obtaining high-speed p-i-n germanium photodiodes for use in backside imaging arrays. These devices are proof-of-principal in situ-doped vertical mesa structures fabricated using single-wafer, atmospheric-pressure chemical vapor deposition (APCVD) homoepitaxy on Czochralski-grown Ge substrates. Excellent impurity profiles resulting from in situ doping, as measured by spreading-resistance profilometry, were 5 × 10 16 , 2 × 10 15 , and 2 × 10 18 (cm -3 ) for the p-type anode, i-region absorber, and n+ cathode, respectively. Scanning electron microscopy analysis revealed very-low defect densities in the epitaxial layers. The diodes, with diameters ranging 100-500 μm, exhibited excellent ideality (n = 1.15) and less than 1-μA dark current, corresponding to up to 80 kV-cm -1 electric field in the smallest devices. Avalanche breakdown bias was consistently at a magnitude of 50 V or lower. External quantum efficiencies in the near-infrared spectrum peaked at 70%. Pulsed illumination experiments, both in the infrared and X-ray regions, showed pulse rise times in the 100-140 ps range, indicating excellent applicability of this method to high-speed X-ray or infrared applications.

36 MATERIALS SCIENCE↗