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Hutchby, J. A.

Publications and source records attributed to Hutchby, J. A..

18 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

Venkatasubramanian, R.↗
NASA NTRS1991

Graded-bandgap AlGaAs solar cells for AlGaAs/Ge cascade cells

Some p/n graded-bandgap Al(x)Ga(1-x)As solar cells were fabricated and show AMO conversion efficiencies in excess of 15 percent without antireflection (AR) coatings. The emitters of these cells are graded between 0.008 is less than or equal to x is less than or equal to 0.02 during growth of 0.25 to 0.30 micron thick layers. The keys to achieving this performance were careful selection of organometallic sources and scrubbing oxygen and water vapor from the AsH3 source. Source selection and growth were optimized using time-resolved photoluminescence. Preliminary radiation-resistance measurements show AlGaAs cells degraded less than GaAs cells at high 1 MeV electron fluences, and AlGaAs cells grown on GaAs and Ge substrates degrade comparably.

Timmons, M. L.↗
NASA NTRS1980

Cascade Solar Cell Workshop report

Issues related to the feasibility, research and development, and demonstration of a 30% AMO cascade solar cell discussed include the material selection, growth and fabrication techniques, and device development strategy for a monolithic (two terminal) cascade cell, a hybrid (four terminal) cascade cell, and a spectral splitting device (three cells). Workshop recommendations include: (1) initiate a long range research program to develop a three junction, monolithic, cascade cell using either AlGaAsSb-GaAsSb or AlGaInAs-GaInAs material system; (2) emphasize OM-CVD epitaxial growth technique, perhaps combined with other technologies in the near term to obtain tunnel junctions; (3) develop a two junction device first; (4) initiate a cascade solar cell modeling program to study and compare performance of two and four terminal cascade devices exposed to electron and proton irradiation; and (5) encourage and be open to new ideas for developing four terminal, hybrid, cascade cells exploiting novel component cell interconnect technologies.

Hutchby, J. A.↗
NASA NTRS1978

Comparative radiation resistance calculation for graded- and constant-composition n Al/x/Ga/1-x/As-p Al/z/Ga/1-z/As solar cells

The performance and radiation resistance of a new double-graded-band-gap solar cell are theoretically determined. The performance of this device is similar to that of the single-graded-band-gap cell. The power-conversion efficiencies of both graded-band-gap structures are shown to be less sensitive to minority-carrier lifetime degradation than a similar constant-composition heteroface cell.

Hutchby, J. A.↗
NASA NTRS1977

Theoretical studies of a new double graded band-gap Al sub x Ga sub 1-x As-Al sub y Ga sub 1-y As

A new double graded band-gap (DGBG) Al sub x Ga sub l-x As-Al sub z Ga sub l-z As solar cell has potential for providing high efficiency performance throughout the entire life of a solar cell in a space environment. A preliminary theoretical analysis indicates that short circuit current available from an optimized DGBG cell is slightly larger than that of a previously reported single graded band-gap cell. However, the DGBG cell potentially offers a substantial improvement in radiation resistance of the base region.

Hutchby, J. A.↗
NASA NTRS1977

MIS diode structure in As/+/ implanted CdS

Structure made by As implantation of carefully prepared high-conductivity CdS surfaces followed by Pt deposition and 450 C anneal display rectifying, although substantially different, I-V characteristics in the dark and during illumination with subband-gap light. Structures prepared in the same way on an unimplanted portion of the substrate have similar I-V characteristics, except that the forward turnover voltage for an illuminated unimplanted diode is much smaller than that for an implanted diode. It is suggested that the charge conduction in both structures is dominated by hole and/or electron tunneling through a metal-semiconductor potential barrier. The tunneling processes appear to be quite sensitive to subband-gap illumination, which causes the dramatic decreases of turnover voltages and apparent series resistances. The difference in turnover voltage appears to be caused by interface states between the Pt electrode and the implanted layer, which suggests a MIS model.

Hutchby, J. A.↗
NASA NTRS1976

Photoluminescence of ion-implanted GaN

Thirty-five elements were implanted in GaN. Their photoluminescence spectra were measured and compared to those of an unimplanted control sample. Most impurities emit a peak at about 2.15 eV. Mg, Zn, Cd, Ca, As, Hg, and Ag have more characteristic emissions. Zn provides the most efficient recombination center. A set of midgap states is generated during the damage-annealing treatment.

Pankove, J. I.↗
NASA NTRS1976

Theoretical analysis of Al/x/Ga/1-x/As-GaAs graded band-gap solar cell

A practical theoretical analysis of an n/p graded band-gap Al(x)Ga(1-x)As-GaAs solar cell indicates that the presence of a built-in electric field acting on holes in the surface layer increases the hole collection efficiency of a nearly optimum cell to a maximum of 97.8%. The electric field is created by the band-gap gradient and serves to reduce the surface hole recombination by 97% and reduce the bulk hole recombination by 80%, compared to a similar GaAs cell. These reduced losses increase cell response substantially for wavelengths less than 0.59 micron and yield a maximum air-mass-zero efficiency of 17.7% (not corrected for a 13% front-surface contact). The model includes an optimized antireflection coating, series resistance, and junction-recombination current.

Hutchby, J. A.↗
NASA NTRS1976

Theoretical optimization and parametric study of n-on-p Al/x/Ga/1-x/As-GaAs graded band-gap solar cell

A comprehensive theoretical model of the graded band-gap Al(x)Ga(1-x)As-GaAs solar cell is used to optimize the n-on-p cell. The model includes power losses due to surface, bulk, and junction minority-carrier recombination, series resistance, and photon reflection from an SiO antireflection coating of optimum thickness. The optimized cell has a junction depth/graded band-gap layer thickness of 1.0 micron, respective donor and acceptor concentrations of 4 x 10 to the 17th power and 2 x 10 to the 17th power per cu cm, and a surface AlAs mode fraction of x = 0.35. The optimized graded band-gap cell has an air-mass-zero efficiency of 17.7% (not corrected for a 13% front surface contact area) and is shown to be less sensitive than a similar n-on-p GaAs cell to material degradation in the form of decreased minority-carrier diffusion lengths and increased surface-recombination velocity

Hutchby, J. A.↗
NASA NTRS1975

Stopping cross sections for 0.25-3.0-MeV He-4 ions in cadmium sulfide

Stopping cross sections of He-4 ions with energies between 0.25 and 3.0 MeV have been measured for cadmium sulfide with a probable error of plus or minus 7% to 8%. The experimental method utilized the Rutherford backscattering technique and measured the energy loss of elastically scattered He-4 ions from films of cadmium sulfide sputtered on carbon substrates. The experimental data are compared with recent experimental and theoretical results.

Miller, W. E.↗
NASA NTRS1975

High-efficiency graded band-gap Al/x/Ga/1-x/As-GaAs solar cell

A detailed theoretical analysis of an n-on-p graded band-gap Al(x)Ga(1-x)As-GaAs solar cell yields a maximum air mass zero power conversion efficiency of 17% compared to 9% for a similar GaAs cell. The analysis includes surface and bulk minority carrier recombination, junction recombination current, spectrally varying surface reflection, and series resistance loss. The maximum efficiency is determined for a surface recombination velocity of 10,000 cm/sec and hole and electron diffusion lengths of 2.1 and 7.6 microns, respectively. The improved efficiency is primarily due to a built-in electric field, caused by the band-gap gradation, accelerating photogenerated holes toward the p-n junction. This field reduces the surface and bulk recombination of the holes, and thereby enhances their collection.

Hutchby, J. A.↗
NASA NTRS1975

High efficiency graded band-gap Al/x/Ga/1-x/As-GaAs p-on-n solar cell

A theoretical analysis of p-on-n (p/n) graded band-gap Al/x/Ga/1-x/As-GaAs solar cells including all practical energy loss mechanisms predicts air mass zero efficiencies of 17.3%. The energy losses include those due to spectral reflection, surface, bulk and junction recombination currents, and series resistance. The device consists of a layer of p-type Al/x/Ga/1-x/As 3.5-micron thick on top of an n-type GaAs substrate. The graded band-gap is achieved by decreasing x from 0.35 at the surface to zero at the junction. The same structure without the graded Al concentration, no longer an optimum device, has an efficiency of 10.4%. The primary function of the graded band-gap material is the reduction of surface and bulk recombination losses in the surface layer by a built-in electric field. A comparison of the p/n structure with an optimized n/p structure indicates that the latter has a slightly higher efficiency (17.7%) for assumed minority carrier diffusion lengths and surface recombination velocity.

Hutchby, J. A.↗
NASA NTRS1974

Efficiency increased in new solar cell: A Concept

Graded band-gap cell should be able to convert solar radiation into electrical energy more efficiently than any solar cell currently available. Thickness of band-gap region should be chosen to maximize both quantity of light absorbed in region and fraction of photogenerated charge carriers collect at junction.

Hutchby, J. A.↗
NASA NTRS1974

Photoluminescence of Zn-implanted GaN

The photoluminescence spectrum of Zn-implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range from 1 x 10 to the 18th to 20 x 10 to the 18th Zn/cu cm.

Pankove, J. I.↗