Quantitative analysis of EXAFS data sets using deep reinforcement learning
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Science & Technology - Other Topics↗
Engineering topics
Hwang, In-Hui
Publications and source records attributed to Hwang, In-Hui.
Orientation-dependent structural properties during growth and growth mechanism of CoO films
The orientation-dependent local structural properties of CoO films on sapphire substrates during growth were investigated through linearly-polarized extended X-ray absorption fine structure (EXAFS) measurements. Specifically, CoO(1 1 1) and (100) crystals with a rock-salt structure (Fm3m) were epitaxially grown on alpha-Al2O3(0001) and (1012) substrates, respectively, at 700 degrees C using a radio-frequency sputtering system. The local structural properties of CoO films in the in-plane and out-of-plane orientations were quantitatively determined using linearly-polarized EXAFS at the Co K-edge during growth. The EXAFS analysis revealed that during the initial stages of growth, the local structural properties exhibit significant differences compared to thick films, with short atomic distances and large (small) Debye-Waller factors observed in the out-of-plane (in-plane) orientations. The local structural strain mostly diminished when approximately 20 CoO layers accumulated on the substrate. Density functional theory (DFT) calculations further supported these findings by confirming that cobalt atoms initially form stable bonds with the sapphire surface, leading to the simultaneous growth of oxygen and cobalt layers in a coordinated manner through layer-by-layer growth.
36 MATERIALS SCIENCE↗
Interfacial structures of Pt nanoparticles and transition-metal-oxide supports
Not Available
Jeong, Eun-Suk↗
Epitaxial growth of oriented CoO films by radio-frequency sputtering deposition
Rock-salt CoO is a p-type semiconductor and its Neel temperature is close to room temperature. CoO-based compounds are known as promising systems for renewable energy harvest with high efficiency. CoO with catalytic and exchange bias properties can be widely used for industrial applications. In this paper, we report high-quality stable CoO(111) and (100) films epitaxially grown on c-cut (0001) and r-cut ($10\bar1$2) alpha-Al 2 O 3 substrates, respectively, using radio-frequency sputtering deposition. X-ray diffraction (XRD) measurements revealed that the CoO films had a rock-salt structure (Fm3m) with lattice constants of 4.2477 Å and 4.2617 Å for film grown on (0001) and ($10\bar1$2) α-Al 2 O 3 substrates, respectively. CoO films with the best crystal quality were grown at a substrate temperature of similar to ~700°C. XRD measurements of CoO(111) films indicated a lack of structural residual strain, whereas CoO(100) films had substantial amounts of structural strain. X-ray reflectivity (XRR) and transmission electron microscopy measurements showed neither oxygen vacancy nor defects in both CoO(111) and (100) films. Further, XRR revealed that the mean electron density of the CoO films was nearly identical to a pure CoO and that the films were considerably stable under the atmosphere.
36 MATERIALS SCIENCE↗
The AXEAP2 program for K β X-ray emission spectra analysis using artificial intelligence
The processing and analysis of synchrotron data can be a complex task, requiring specialized expertise and knowledge. Our previous work addressed the challenge of X-ray emission spectrum (XES) data processing by developing a standalone application using unsupervised machine learning. However, the task of analyzing the processed spectra remains another challenge. Although the non-resonant K β XES of 3 d transition metals are known to provide electronic structure information such as oxidation and spin state, finding appropriate parameters to match experimental data is a time-consuming and labor-intensive process. Here, a new XES data analysis method based on the genetic algorithm is demonstrated, applying it to Mn, Co and Ni oxides. This approach is also implemented as a standalone application, Argonne X-ray Emission Analysis 2 ( AXEAP2 ), which finds a set of parameters that result in a high-quality fit of the experimental spectrum with minimal intervention. AXEAP2 is able to find a set of parameters that reproduce the experimental spectrum, and provide insights into the 3 d electron spin state, 3 d –3 p electron exchange force and K β emission core-hole lifetime.
36 MATERIALS SCIENCE↗
Dispersion and stability mechanism of Pt nanoparticles on transition-metal oxides
The heterogeneous catalysts of Pt/transition-metal oxides are typically synthesized through calcination at 500 °C, and Pt nanoparticles are uniformly and highly dispersed when hydrogen peroxide (H 2 O 2 ) is applied before calcination. The influence of H 2 O 2 on the dispersion and the stability of Pt nanoparticles on titania-incorporated fumed silica (Pt/Ti–FS) supports was examined using X-ray absorption fine structure (XAFS) measurements at the Pt L 3 and Ti K edges as well as density functional theory (DFT) calculations. The local structural and chemical properties around Pt and Ti atoms of Pt/Ti–FS with and without H 2 O 2 treatment were monitored using in-situ XAFS during heating from room temperature to 500 °C. XAFS revealed that the Pt nanoparticles of H 2 O 2 -Pt/Ti–FS are highly stable and that the Ti atoms of H 2 O 2 -Pt/Ti–FS support form into a distorted-anatase TiO 2 . DFT calculations showed that Pt atoms bond more stably to oxidized–TiO 2 surfaces than they do to bare- and reduced–TiO 2 surfaces. XAFS measurements and DFT calculations clarified that the presence of extra oxygen atoms due to the H 2 O 2 treatment plays a critical role in the strong bonding of Pt atoms to TiO 2 surfaces.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
AXEAP : a software package for X-ray emission data analysis using unsupervised machine learning
The Argonne X-ray Emission Analysis Package ( AXEAP ) has been developed to calibrate and process X-ray emission spectroscopy (XES) data collected with a two-dimensional (2D) position-sensitive detector. AXEAP is designed to convert a 2D XES image into an XES spectrum in real time using both calculations and unsupervised machine learning. AXEAP is capable of making this transformation at a rate similar to data collection, allowing real-time comparisons during data collection, reducing the amount of data stored from gigabyte-sized image files to kilobyte-sized text files. With a user-friendly interface, AXEAP includes data processing for non-resonant and resonant XES images from multiple edges and elements. AXEAP is written in MATLAB and can run on common operating systems, including Linux, Windows, and MacOS.
97 MATHEMATICS AND COMPUTING↗
Electrical and structural properties of VO 2 in an electric field
We examined the electrical and local structural properties of a VO 2 film at different electric fields using electrical resistance and x-ray absorption fine structure (XAFS) measurements at the V K edge in the temperature range of 30–100 °C. The T c value of the metal-to-insulator transition (MIT) during both heating and cooling decreases with electric field. When the electric field exceeds a certain value, the MIT becomes sharper due to Joule heating. Furthermore, the MIT, the structural phase transition (SPT), and the pre-edge peak transition of the VO 2 do not congruently occur at a uniform temperature. A metallic VO 2 is observed in only the rutile (or M2) symmetry. An electric field induces a substantial amount of conduction electrons in insulating VO 2 . Simultaneously measured resistance and XAFS reveal that Joule heating caused by an external electric field significantly affects the MIT and SPT of VO 2 .
36 MATERIALS SCIENCE↗
Decoupling the metal insulator transition and crystal field effects of VO 2
VO 2 is a highly correlated electron system which has a metal-to-insulator transition (MIT) with a dramatic change of conductivity accompanied by a first-order structural phase transition (SPT) near room temperature. The origin of the MIT is still controversial and there is ongoing debate over whether an SPT induces the MIT and whether the T c can be engineered using artificial parameters. We examined the electrical and local structural properties of Cr- and Co-ion implanted VO 2 (Cr-VO 2 and Co-VO 2 ) films using temperature-dependent resistance and X-ray absorption fine structure (XAFS) measurements at the V K edge. The temperature-dependent electrical resistance measurements of both Cr-VO 2 and Co-VO 2 films showed sharp MIT features. The T c values of the Cr-VO 2 and Co-VO 2 films first decreased and then increased relative to that of pristine VO 2 as the ion flux was increased. The pre-edge peak of the V K edge from the Cr-VO 2 films with a Cr ion flux ≥ 10 13 ions/cm 2 showed no temperature-dependent behavior, implying no changes in the local density of states of V 3d t 2g and e g orbitals during MIT. Extended XAFS (EXAFS) revealed that implanted Cr and Co ions and their tracks caused a substantial amount of structural disorder and distortion at both vanadium and oxygen sites. The resistance and XAFS measurements revealed that VO 2 experiences a sharp MIT when the distance of V–V pairs undergoes an SPT without any transitions in either the VO 6 octahedrons or the V 3d t 2g and eg states. This indicates that the MIT of VO 2 occurs with no changes of the crystal fields.
36 MATERIALS SCIENCE↗
Polarization-dependent DANES study on vertically-aligned ZnO nanorods
The local structural and local density of states of vertically-aligned ZnO nanorods were examined by using a polarization-dependent diffraction anomalous near edge structure (DANES) measurements from c-oriented ZnO nanorods at the Zn K edge with the incident x-ray electric field parallel and perpendicular to the x-ray momentum transfer direction. Orientation-dependent local structures determined by DANES were comparable with polarization-dependent EXAFS results. Unlike other techniques, polarization-dependent DANES can uniquely describe the orientation-dependent local structural properties and the local density of states of a selected element in selected-phased crystals of compounds or mixed-phased structures.
DANES↗
Anomalous structural disorder and distortion in metal-to-insulator-transition Ti{sub 2}O{sub 3}
Mott proposed that impurity bands in corundum-symmetry Ti{sub 2}O{sub 3} at high temperatures caused a collapse in the bandgap. However, the origin of the impurity bands has not yet been clarified. We examine the local structural properties of metal-to-insulator-transition Ti{sub 2}O{sub 3} using in-situ x-ray absorption fine structure (XAFS) measurements at the Ti K edge in the temperature range from 288 to 739 K. The Ti{sub 2}O{sub 3} powder is synthesized by using a chemical reaction method. X-ray diffraction (XRD) measurements from Ti{sub 2}O{sub 3} with a Rietveld refinement demonstrate a single-phased R-3c symmetry without additional distortion. Extended-XAFS combined with XRD reveals a zigzag patterned Ti position and an anomalous structural disorder in Ti-Ti pairs, accompanied by a bond length expansion of the Ti-Ti pairs along the c-axis for T > 450 K. The local structural distortion and disorder of the Ti atoms would induce impurity levels in the band gap between the Ti 3d a{sub 1g} and e{sub g}{sup π} bands, resulting in a collapse of the band gap for T > 450 K.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗