Engineering topics
Ikuhara, Yuichi
Publications and source records attributed to Ikuhara, Yuichi.
Direct visualization of anionic electrons in an electride reveals inhomogeneities
Anionic electron within an electride was visualized with atomic resolution using differential phase-contrast imaging.
Dislocation-induced large local polarization inhomogeneity of ferroelectric materials
Dislocations in ferroelectrics play important roles in ferroelectricity, piezoelectricity, and dielectricity. However, the intrinsic charge-lattice coupling mechanism in ferroelectric crystals containing dislocations is still not well understood. Here, we report a large local polarization inhomogeneity of ~100 μCcm –2 induced by a single a[001] dislocation in the PbZr 0.2 Ti 0.8 O 3 /SrTiO 3 film/substrate heterostructure, the tensile region (~120 μCcm –2 ) and the compressive strain region (~21 μCcm –2 ) around the dislocation forms a butterfly-like area. Furthermore, this study reveals the dramatic effects of dislocations on local polarization and provides a strategy to manipulate the polarization magnitude and orientation of local polarization by defect engineering.
Temperature-Sensitive Structure Evolution of Lithium–Manganese-Rich Layered Oxides for Lithium-Ion Batteries
Cathodes of lithium-rich layered oxides for high-energy Li-ion batteries in electrically powered vehicles are attracting considerable attention by the research community. Furthermore, current research is insufficient to account for their complex reaction mechanism and application. Thus, the structural evolution of lithium-manganese-rich layered oxides at different temperatures during electrochemical cycling has been investigated thoroughly, and their structural stability has been designed. The results indicated structure conversion from the two structures into a core-shell structure with a single distorted-monoclinic LiTMO 2 structure core and disordered-spinel/rock salt structure shell, along with lattice oxygen extraction and lattice densification, transition- metal migration, and aggregation on the crystal surface. Here, the structural conversion behavior was found to be seriously temperature sensitive, accelerated with higher temperature, and can be effectively adjusted by structural design. This study clarifies the structural evolution mechanism of these lithium-rich layered oxides and opens the door to the design of similar high-energy materials with better cycle stability.
Atomic-scale mechanism of internal structural relaxation screening at polar interfaces
Not Available
First‐principles study in an inter‐granular glassy film model of silicon nitride
Abstract Based on a previously constructed intergranular glassy film ( IGF ) model for bulk silicon nitride, a large periodic model of 3864 atoms containing 2 grains of different orientations from the main bulk β‐Si 3 N 4 and 2 IGF s was fully relaxed using the ab initio density‐functional theory package VASP . The relaxed structure was then used to calculate the electronic structure, density of states, interatomic bonding, partial charge distribution, and electron localization using the OLCAO method. Analysis of the data focuses on the interfacial regions between bulk β‐Si 3 N 4 and the Si‐O‐N glass layer with different orientations. The total bond order density ( TBOD ) is evaluated in different interfacial and bulk regions. We show minor differences in the internal cohesion between crystalline grains of different facets. However, the overall charges in the bulk crystal grains and in the glassy regions are electropositive which are balanced by the negatively charged interfacial region between the two. The presence of a less rigid glassy layer is the reason for structural flexibility in ceramics without a huge penalty in the steric energy. The optimization of the interfacial structure and bonding via the creation of defective sites is the atomic origin for the existence of the IGF in silicon nitride. The insights obtained from this detailed quantum mechanical analysis of a realistic IGF model are discussed including implications on the strength, fracture toughness, and processing methods. We also discuss the potential applications of our method to other complex materials systems.
Realization of Large Electric Polarization and Strong Magnetoelectric Coupling in BiMn 3 Cr 4 O 12
Here, magnetoelectric multiferroics have received much attention in the past decade due to their interesting physics and promising multifunctional performance. For practical applications, simultaneous large ferroelectric polarization and strong magnetoelectric coupling are preferred. However, these two properties have not been found to be compatible in the single–phase multiferroic materials discovered as yet. Here, it is shown that superior multiferroic properties exist in the A–site ordered perovskite BiMn 3 Cr 4 O 12 synthesized under high–pressure and high–temperature conditions. The compound experiences a ferroelectric phase transition ascribed to the 6s 2 lone–pair effects of Bi 3+ at around 135 K, and a long–range antiferromagnetic order related to the Cr 3+ spins around 125 K, leading to the presence of a type–I multiferroic phase with huge electric polarization. On further cooling to 48 K, a type–II multiferroic phase induced by the special spin structure composed of both Mn– and Cr–sublattices emerges, accompanied by considerable magnetoelectric coupling. BiMn 3 Cr 4 O 12 thus provides a rare example of joint multiferroicity, where two different types of multiferroic phases develop subsequently so that both large polarization and significant magnetoelectric effect are achieved in a single–phase multiferroic material.
Single atom visibility in STEM optical depth sectioning
The continuing development of aberration correctors for the scanning transmission electron microscope (STEM) offers the possibility of locating single atoms in crystals in 3D via optical depth sectioning. The main factors that determine the feasibility of such an approach are visibility and dose requirements. In this paper, we show how Poisson's statistics can be quantitatively incorporated into STEM image simulations and demonstrate that the 3D location of single cerium atoms in wurtzite-type aluminum nitride is indeed feasible under large-angle illumination conditions with a relatively low dose. We also show that chromatic aberration does not presently represent a limitation provided a cold field emission source is used. Finally, these results suggest efforts into improved aberration corrector designs for larger illumination angles that offer significant potential for 3D structure determination of materials.
Dislocation structures and electrical conduction properties of low angle tilt grain boundaries in LiNbO{sub 3}
Dislocations in crystalline materials constitute unique, atomic-scale, one-dimensional structure and have a potential to induce peculiar physical properties that are not found in the bulk. In this study, we fabricated LiNbO{sub 3} bicrystals with low angle tilt grain boundaries and investigated the relationship between the atomic structure of the boundary dislocations and their electrical conduction properties. Observations by using transmission electron microscopy revealed that dislocation structures at the (0001) low angle tilt grain boundaries depend on the tilt angle of the boundaries. Specifically, the characteristic dislocation structures with a large Burgers vector were formed in the boundary with the tilt angle of 2°. It is noteworthy that only the grain boundary of 2° exhibits distinct electrical conductivity after reduction treatment, although LiNbO{sub 3} is originally insulating. This unique electrical conductivity is suggested to be due to the characteristic dislocation structures with a large Burgers vector.
Microstructural analysis and thermoelectric properties of Sn-Al co-doped ZnO ceramics
Sn-Al co-doped polycrystalline ZnO ceramics were prepared by sintering in air. Phase and microstructure analysis was performed by X-ray diffraction and SEM-EDS and thermoelectric properties were measured. XRD analysis showed a ZnO primary phase as well as secondary phase peaks due to the formation of a Zn{sub 2}SnO{sub 4} spinel phase or SnO{sub 2}(ZnO:Sn-Al){sub m} intergrowth phase. SEM analysis revealed a dense microstructure with a small number of nanometric pores, consistent with the measured density of 5.48 g/cm{sup 3}. An activated electrical conductivity characteristic of a semiconducting material was observed as well as a negative Seebeck coefficient with both values increasing in absolute value from RT to 730 °C. The power factor had a maximum value of 3.73×10{sup −4} W m{sup −1} K{sup −2} at 730 °C. Thermal conductivity measurements showed a significant reduction over the measured temperature range compared to undoped ZnO. This could be attributed to grain size reduction, the formation of a nanoscale secondary phase or a reduction in crystallinity caused by Sn-Al co-doping. A maximum ZT of 0.06 was obtained at 750 °C for the Sn-Al co-doped ZnO ceramics.
Structure and energetics of nanotwins in cubic boron nitrides
Recently, nanotwinned cubic boron nitrides (NT c-BN) have demonstrated extraordinary leaps in hardness. However, an understanding of the underlying mechanisms that enable nanotwins to give orders of magnitude increases in material hardness is still lacking. Here, using transmission electron microscopy, we report that the defect density of twin boundaries depends on nanotwin thickness, becoming defect-free, and hence more stable, as it decreases below 5 nm. Using ab initio density functional theory calculations, we reveal that the Shockley partials, which may dominate plastic deformation in c-BNs, show a high energetic barrier. We also report that the c-BN twin boundary has an asymmetrically charged electronic structure that would resist migration of the twin boundary under stress. These results provide important insight into possible nanotwin hardening mechanisms in c-BN, as well as how to design these nanostructured materials to reach their full potential in hardness and strength.