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Inguscio, M.

Publications and source records attributed to Inguscio, M..

Flavour-selective localization in interacting lattice fermions

Abstract A large repulsion between particles in a quantum system can lead to their localization, an effect responsible for the Mott insulator phases in strongly correlated materials. In a system with multiple orbitals, an orbital-selective Mott insulator can form, where electrons in some orbitals are predicted to localize while others remain itinerant. Here we demonstrate a more general version of this phenomenon by observing flavour-selective localization in an atom-based quantum simulator. Our experiment realizes Fermi–Hubbard models with an SU(3) symmetry that can be broken using a tunable coupling between flavours. We observe an enhancement of the localization associated with a selective Mott transition and the emergence of flavour-dependent correlations. Our realization of flavour-selective Mott physics demonstrates the potential of cold atoms to simulate interacting multicomponent materials such as superconductors and topological insulators.

Physics↗

Far-infrared self-broadening in methylcyanide - Absorber-perturber resonance

Using tunable far-infrared spectrometers with high-frequency stability and accuracy, the self-pressure broadening and shift of CH3CN are measured. Evidence of absorber-perturber resonance effects on the collisional line shape are obtained. This tests the theoretical model and its possible improvements and also allows predictions of broadening and shift for a large class of molecules. Moreover, the resonance effect produces a theoretical temperature dependence of self-broadening that is different from what is commonly assumed.

Buffa, G.↗

Accurate frequency of the 119 micron methanol laser from tunable far-infrared absorption spectroscopy

High-accuracy absorption spectroscopy of CH3OH in the far infrared is discussed. In addition to 22 transitions in the ground state, the frequency of the (n, tau, J, K), (0, 1, 16, 8) to (0, 2, 15, 7) transition in the nu5 excited vibrational level, which is responsible for the laser emission at 119 microns, was measured. The measured frequency is 2,522,782.57(10) MHz at zero pressure, with a pressure shift of 6.1(32) kHz/Pa (0.805/420/ MHz/torr). An accurate remeasurement of the laser emission frequency has also been performed, and the results are in good agreement.

Inguscio, M.↗

Sub-Doppler tunable far-infrared spectroscopy

The first experimental observations of sub-Doppler linewidths in a cell made using tunable far-infrared radiation are reported. A double-resonance scheme has been used, combining CO2-laser infrared radiation with tunable far-infrared radiation to observe a sub-Doppler line shape in an excited vibrational state of CH3OH.

Inguscio, M.↗

Pressure effects on the frequency of continuous-wave optically pumped far-infrared lasers

The frequency of the 170.6-micron CW CH3OH optically pumped laser emission has been remeasured at different pressures without observing the pressure shift observed by Lawandy and Koepf (1980). The far-infrared frequency was synthesized with two stabilized CO2 lasers. No measurable pressure shift over the operating pressure range of the laser was observed, and the frequency was confirmed to be 1 757 526.3 MHz. However, competing lasing lines were found to produce spurious effects on the frequency. These effects may explain the apparent shifts.

Inguscio, M.↗

The direct measurement of the 3 3P0-3 3P1 fine-structure interval and the gJ-factor of atomic silicon by laser magnetic resonance

The J - 1 fine structure interval and the g-factor of the 3P1 state have been determined with high precision in the present laser magnetic resonance measurements of the ground 3p2 3P multiplet of atomic Si. Delta-E(3P1-3P0) = 2,311,755.6(7) MHz, and gJ(3P1) = 1.500830(70). Single-configuration calculations of gJ for 3P1 and 3P2 yield a value for the latter which, at 1.501095, is noted to differ by an unexpectedly large margin from the experimental value.

Evenson, K. M.↗