Engineering topics

Inouchi, Yutaka

Publications and source records attributed to Inouchi, Yutaka.

3 records

DOE OSTI2014

Ion sources for ion implantation technology (invited)

Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm × 10 cm, and the beam uniformity is important as well as the total target beam current.

43 PARTICLE ACCELERATORS↗

DOE OSTI2014

Multi-cusp ion source for doping process of flat panel display manufacturing

We developed a multi-cusp ion source for Nissin ion doping system iG5 which is used in low temperature poly-crystalline silicon processes for flat panel display (FPD) manufacturing. In this ion source, BF{sub 3} or PH{sub 3} diluted H{sub 2} plasmas are produced and large area ribbon ion beams are extracted. In general, ion ratio of B{sup +} in BF{sub 3} plasma is much smaller than BF{sub 2}{sup +} in multi-cusp ion sources. We developed a new method to increase B{sup +} ratio and obtained mass analyzed B{sup +} target current of 130 mA. We employed newly improved multi-slot type electrodes for the beam extraction system and obtained stable beams with the uniformity of below 3%. In BF{sub 3} plasmas, several undesirable metal fluorides are produced in the plasma chamber and deposited on the electrode system, which cause glitches and poor beam uniformity. We introduce several cleaning methods.

36 MATERIALS SCIENCE↗

DOE OSTI2012

Multi-cusp ion source for Gen 5.5 doping system

A multi-cusp ion source was designed for Nissin ion doping system 'iG5' developed for GEN5.5 processes. It has many points of similarity to iG4 ion source. The extraction area and the internal volume of the plasma chamber are scaled up. And the method to obtain high current B{sup +} beams is same as iG4 ion source. On the other hand, iG5 ion source has an added feature on the extraction system. We use new developed multi-slit extraction system to obtain stable beams with small divergence. The target boron beam current density of 1mA/cm (that is 130mA) was obtained.

36 MATERIALS SCIENCE↗