Engineering topics
Inoue, Yoku
Publications and source records attributed to Inoue, Yoku.
Interfacial Oxygen Stabilizes Composite Silicon Anodes
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Neutron detection using boron gallium nitride semiconductor material
In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after α-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.
Weavable high-capacity electrodes
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