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Isaev, V. A.

Publications and source records attributed to Isaev, V. A..

5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Optical fibres and fibre tapers with an array of Bragg gratings

The properties of optical fibres with an array of fibre Bragg gratings written directly during the fibre drawing are considered. Such optical fibres offer new possibilities for producing new types of active and passive fibre elements due to the enhanced back-reflected signal of the so-called artificial Rayleigh scattering, and are of interest for modelling physical phenomena associated with the statistics of reflecting centres in optical fibres, such as, e.g., localisation of photons. We studied fibres with an array of Bragg gratings written in photosensitive fibres, ordinary single-mode optical fibre of the SMF-28 type and in fibre with a core doped with erbium ions. To control the spectrum width of the reflected signal, we used chirped phase masks, as well as writing arrays of gratings in tapered optical fibres. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers

Various methods for the formation of ohmic contacts to boron-doped δ layers in CVD-diamond epitaxial structures are investigated. In the first variant, an additional thin heavily doped layer was formed on the diamond surface to which an ohmic contact is formed. Then, the surface p{sup +} layer between the contact pads is etched out; therefore, the current in the structure flows only through a buried δ layer. In the second approach, the doped diamond selectively grows in the contact windows under a metallic mask after preliminary etching of the undoped diamond layer (cap) up to the δ layer. In this case, the heavily doped p{sup +} layer forms an end contact to the δ layer. These two variants differ in terms of the conditions of applicability, the complexity of the manufacturing technology, the value of the contact resistance, and can be used to solve problems in which it is necessary to have a different quality of the contacts, such as the formation of transistor structures or test cells for measuring physical characteristics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Paramagnetic Chromium Centers in Y{sub 2}SiO{sub 5} and Sc{sub 2}SiO{sub 5} Crystals

The EPR spectrum of yttrium and scandium silicate single crystals doped with chromium has been studied at various frequencies. Y{sub 2}SiO{sub 5} has one triclinic Cr{sup 3+} center, while the Sc{sub 2}SiO{sub 5} crystals demonstrate two nonequivalent centers. The spin Hamiltonian parameters of these centers have been determined. These centers are found to be tricharged chromium ions localized in the yttrium and scandium positions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 × 10{sup 17} to ~10{sup 20} at cm{sup –3} and of δ doping to the surface concentration (0.3–5) × 10{sup 13} at cm{sup –3} are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.

36 MATERIALS SCIENCE↗