Engineering topics

Jacob, B.

Publications and source records attributed to Jacob, B..

3 records

NASA NTRS2017

Radiation Hardness Study on SiC Power MOSFETs

As an emerging technology, silicon carbide (SiC) power MOSFETs are showing great potential for higher temperature/power rating, higher efficiency, and reduction in size and weight, which makes this technology ideal for high temperature, harsh environment applications such as downhole, medical, avionic, or even space applications. Radiation tolerance therefore becomes a critical aspect of the device performance in such environments. In this work, we explored radiation hardness of SiC devices to total ionizing dose (TID), neutron-induced single-event burnout (SEB), and heavy-ion induced single-event effects (SEE).

SiC↗

NASA NTRS1973

Development of large diameter carbon monofilament

A process for preparing large diameter carbon-boron monofilament was developed. The process involves chemical vapor depositing a carbon-boron alloy monofilament from a BCl3, CH4, and H2 gas mixture onto a carbon substrate. Amorphous alloys were formed when gaseous mixtures containing greater than 20 percent methane (80 percent BCl3) were used. The longest uninterrupted lengths of carbon-boron monofilament were produced using a CH4/BCl3 gas ratio of 2.34. It was found that the properties of the carbon-boron alloy monofilament improved when the carbon substrate was precleaned in chlorine. The highest strength monofilament was attained when a CH4/BCl3 gas volume ratio of 0.44 was 28 million N/sq cm (40 million psi). While the highest strengths were attained in this run, the 0.44 gas ratio and other CH4/BCl3 ratios less than 2.34 would not yield long runs. Runs using these ratios were usually terminated because of a break in the monofilament within the reactor. It is felt better process control could probably be achieved by varying the amount of hydrogen; the BCl3/H2 ratio was kept constant in these studies.

Jacob, B.↗

NASA NTRS1973

Development of a process for producing ribbon shaped boron filaments

A ribbon-shaped boron filament with a tensile strength of 138 KN/sq cm (200 ksi) was investigated. The investigation was carried out using both carbon and tungsten as substrate materials. No satisfactory results were obtained utilizing uncoated, copper-plated or silicon carbide coated tungsten ribbon substrates. Carbon ribbon substrates were prepared by pyrolysis of stretched polyimide tape. A severe deposition gradient occurred in all dc reactor experiments due to convective cooling at the edge of the substrate that resulted in a weak, nonuniform filament. RF heating, however, completely eliminated this gradient problem and a 90 cm (35.5 in.) long boron ribbon was produced at .85 cm/sec (100 ft/hr) using a frequency of 40.68 megahertz. This boron ribbon, however, exhibited a light-bulb effect during deposition to 59 KN/sq cm (85.7 ksi) were obtained from this ribbon. Several silicon carbide ribbon shaped filaments were also produced during this investigation by decomposition of CH3SiHCl2 onto carbon substrates. Contrary to the boron work, silicon carbide ribbon was readily prepared in dc static reactors. A very uniform and smooth deposition was obtained with strengths up to 71.1 KN/sq cm (103.5 ksi).

Basche, M.↗