Engineering topics
Jagielski, Jacek
Publications and source records attributed to Jagielski, Jacek.
RBS/C, HRTEM and HRXRD study of damage accumulation in irradiated SrTiO3
Damage accumulation in argon-irradiated SrTiO3 single crystals has been studied by using combination of Rutherford Backscattering/Channeling (RBS/C), High Resolution Transmission Electron Microscopy (HRTEM) and High Resolution X-Ray Diffraction (HRXRD) techniques. The RBS/C spectra were fitted using McChasy, a Monte Carlo simulation code allowing the quantitative analysis of amorphous-like and dislocation-like types of defects. The results were interpreted by using a Multi-Step Damage Accumulation model which assumes, that the damage accumulation occurs in a series of structural transformations, the defect transformations are triggered by a stress caused by formation of a free volume in the irradiated crystal. This assumption has been confirmed by High Resolution Transmission Electron Microscopy and High Resolution X-Ray Diffraction analysis.
Analysis of Crystal Lattice Deformation by Ion Channeling
A model of dislocations has been developed for the use in Monte Carlo simulations of ion channeling spectra obtained for defected crystals. High resolution transmission electron microscopy micrographs show that the dominant type of defects in the majority of ion irradiated crystals are dislocations. The RBS/channeling spectrum is then composed of two components: one is due to direct scattering on randomly displaced atoms and the second one is related to beam defocussing on dislocations, which produce predominantly crystal lattice distortions, i.e. bent channels. In order to provide a correct analysis of backscattering spectra for the crystals containing dislocations we have modified the existing Monte Carlo simulation code "McChasy". A new version of the code has been developed by implementing dislocations on the basis of the Peierls-Nabarro model. Parameters of the model have been determined from the high resolution transmission electron microscopy data. The newly developed method has been used to study the Ar-ion bombarded SrTiO3 samples. The best fit to the Rutherford backscattering/channeling spectra has been obtained by optimizing the linear combination of two kinds of defects: displaced atoms and bent channels. The great virtue of the Monte Carlo simulation is that unlike a traditional dechanneling analysis it allows quantitative analysis of crystals containing a mixture of different types of defects.
Radiation effects in nuclear materials: Role of nuclear and electronic energy losses and their synergy
Ceramic oxides and carbides are promising matrices for the immobilization and/or transmutation of nuclear wastes, cladding materials for gas-cooled fission reactors and structural components for fusion reactors. For these applications there is a need of fundamental data concerning the behavior of nuclear ceramics upon irradiation. This article is focused on the presentation of a few remarkable examples regarding ion-beam modifications of nuclear ceramics with an emphasis on the mechanisms leading to damage creation and phase transformations. Results obtained by combining advanced techniques (Rutherford backscattering spectrometry and channeling, X-ray diffraction, transmission electron microscopy, Raman spectroscopy) concern irradiations in a broad energy range (from keV to GeV) with the aim of exploring both nuclear collision (Sn) and electronic excitation (Se) regimes. Finally, the daunting challenge of the demonstration of the existence of synergistic effects between Sn and Se is tackled by discussing the healing due to intense electronic energy deposition (SHIBIEC) and by reporting results recently obtained in dual-beam irradiation (DBI) experiments.
Monte Carlo simulations of channeling spectra recorded for samples containing complex defects
The main aim of the present paper is to describe the current status of the development of McChasy, a Monte Carlo simulation code, to make it suitable for the analysis of dislocations and dislocation loops in crystals. Such factors like the shape of the bent channel and geometrical distortions of the crystalline structure in the vicinity of dislocation has been discussed. Several examples of the analysis performed at different energies of analyzing ions are presented. The results obtained demonstrate that the new procedure applied to the spectra recorded on crystals containing dislocation yields damage profiles which are independent of the energy of the analyzing beam.
Irradiation damage in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals: Ballistic versus ionization processes
The structural transformations induced in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals irradiated at high energies (870-MeV Xe), where ionization processes (electronic stopping) dominate, and at low energies (4-MeV Au), where ballistic processes (nuclear stopping) dominate, have been studied via the combination of Rutherford backscattering spectrometry and channeling (RBS/C), Raman spectroscopy, and transmission electron microscopy (TEM) experiments. At high energy, amorphization occurs directly in individual ion tracks from the extreme electronic-energy deposition, and full amorphization results from the overlapping of these tracks as described by a direct impact model. The track diameters lie in the range 6-9 nm. At low energy, amorphization occurs via indirect processes, driven by ballistic nuclear energy deposition from the ions, that is accounted for in the framework of both direct-impact/defect-stimulated and multi-step damage accumulation models. The ion fluence for total amorphization of the irradiated layer is much higher at low energy (0.5 ion nm{sup -2}) than at high energy (0.05 ion nm{sup -2}), consistent with the nuclear stopping at low energy (5.2 keV/nm) compared to the electronic stopping at high energy (29 keV/nm).
Damage evolution in Au-implanted Ho2Ti2O7 titanate pyrochlore
Damage evolution at room temperature in Ho2Ti2O7 single crystals is studied under 1 MeV Au2+ ion irradiation by Rutherford backscattering spectroscopy along the <001> direction. For a better determination of ion-induced disorder profile, an iterative procedure and a Monte Carlo code (McChasy) were used to analyze ion channeling spectra. A disorder accumulation model, with contributions from the amorphous fraction and the crystalline disorder, is fit to the Ho damage accumulation data. The damage evolution behavior indicates that the relative disorder on the Ho sublattice follows a nonlinear dependence on dose and that defect-stimulated amorphization is the primary amorphization mechanism. Similar irradiation behavior previously was observed in Sm2Ti2O7. A slower damage accumulation rate for Ho2Ti2O7, as compared with damage evolution in Sm2Ti2O7, is mainly attributed to a lower effective cross section for defect-simulated amorphization.