Engineering topics

Jaksic, Marko

Publications and source records attributed to Jaksic, Marko.

4 records

DOE OSTI2021

Power inverter module with reduced inductance

A power inverter module includes a base module having a plurality of electrically conductive layers, including a first conductive layer, a second conductive layer and a third conductive layer. A first terminal is operatively connected to the first conductive layer at a first end and a second terminal is operatively connected to the second conductive layer at the first end. An isolation sheet is sandwiched between the first and second terminals. The first terminal and the second terminal include a respective proximal portion composed of a first material and a respective distal portion composed of a second material. At least one of the first terminal and the second terminal is bent to create an overlap zone such that a gap between the first terminal and the second terminal in the overlap zone is less than a threshold distance. The power inverter module is configured to reduce parasitic inductance.

Jaksic, Marko↗

DOE OSTI2020

High-frequency direct current bulk capacitors with interleaved busbar packages

Presented are electrical capacitors with interleaved busbar architectures, methods for making/operating such capacitors, and electric-drive vehicles equipped with such capacitors. A bulk capacitor includes multiple capacitor devices disposed within an outer housing and operable to modify electric current transmitted between a power source and an electrical load. An interleaved busbar package is interposed between the capacitor devices and outer housing. The interleaved busbar package includes a first busbar plate that electrically connects to first terminals of the capacitor devices and defines a busbar pocket. A second busbar plate is seated within the busbar pocket and electrically connects to second terminals of the capacitor devices. The second busbar plate includes a capacitor basin that seats therein the capacitor devices. An isolator sheet is interleaved between and electrically insulates the first and second busbar plates. The capacitor devices and interleaved busbar package may be partially submerged in an epoxy endfill composition.

42 ENGINEERING↗

DOE OSTI2020

Electrification Annual Progress Report (FY2019)

During fiscal year 2019 (FY 2019), the U.S. Department of Energy (DOE) Vehicle Technologies Office (VTO) funded early stage research & development (R&D) projects that address Batteries and Electrification of the U.S. transportation sector. The VTO Electrification Sub-Program is composed of Electric Drive Technologies, and Grid Integration activities. The Electric Drive Technologies group conducts R&D projects that advance electric motors and power electronics technologies. The Grid and Charging Infrastructure group conducts R&D projects that advance grid modernization and electric vehicle charging technologies. This document presents a brief overview of the Electrification Sub-Program and progress reports for its R&D projects. Each of the progress reports provide a project overview and highlights of the technical results that were accomplished in FY 2019.

25 ENERGY STORAGE↗

DOE OSTI2020

Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor

Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for modern power electronics systems due to large economic implications. SiC mosfet modules exhibit narrow SC withstand times and generally much lower SC robustness than silicon (Si) insulated-gate bipolar transistors (IGBTs). This puts a critical concern on their utilization, further stressing the importance of reliable protection. This article presents a comprehensive analysis and discussion on the SiC mosfet module SC protection and performance comparison between conventional desaturation detection, previously used for Si IGBT protection, and Rogowski switch-current sensor (RSCS) detection. In addition, this article presents the experimental design for soft turn-off as a reaction to the SC detection to avoid excessive overshoots during the abrupt turn-off of the SC current. To perform different types of SC with various fault inductances on different temperatures, and for the sake of fair comparison under the same conditions, a gate-driver unit for 1.2 kV SiC mosfet half-bridge modules is developed containing both detection methods. The results demonstrate that both methods are successful in protecting the module in all SC types, with superiority of the RSCS detection and concerns for desaturation detection in high-inductance and high dc-bus voltage SC events.

42 ENGINEERING↗