Estimating Methane Emission Durations Using Continuous Monitoring Systems
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Engineering topics
Publications and source records attributed to Jia, Meng.
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Ionic liquids (ILs) are considered to be one of the steppingstones to fabricate next generation electrochemical devices given their unique physical and chemical properties. The addition of water to ILs significantly impact electrochemical related properties including viscosity, density, conductivity, and electrochemical window. Here, we utilize ambient pressure X-ray photoelectron spectroscopy (APXPS) to examine the impact of water on values of the electrochemical shift (S), which is determined by measuring changes in binding energy shifts as a function of an external bias. APXPS spectra of C 1s, O 1s and N 1s regions are examined for the IL 1-butyl-3-methylimidazolium acetate, [C 4 mim][OAc], at the IL/gas interface as a function of both water vapor pressure and external bias. Results reveal that in the absence of water vapor there is an IL ohmic drop between the working electrode and quasi reference electrode, giving rise to chemical specific S values of less than one. Upon introducing water vapor, S values approach one as a function of increasing water vapor pressure, indicating a decrease in the IL ohmic drop as the IL/water mixture becomes more conductive and the potential drop is driven by the electric double layer at the electrode/IL interface.
Bismuth (Bi) has a fairly low melting point of 544 K making it practical as a liquid metal medium in a number of applications. Under ambient atmospheric conditions the surface of solid Bi oxidizes. While the solid Bi interface has been fairly well characterized with surface science studies upon exposure to oxygen, to date little is known about the molecular level reactivity of the liquid interface. Here, using ambient pressure X-ray photoelectron spectroscopy the liquid-gas interfacial chemistry of Bi was examined upon exposure to oxygen gas and water vapor at 550 K up to a maximum pressure of 0.5 Torr. Water vapor remained unreactive towards the liquid interface over the entire pressure range. Oxygen remined unreactive up to 10 –4 Torr, whereas above this pressure oxidation was observed forming Bi 2 O 3 . The oxidation exposure onset was > 5 x 10 5 Langmuirs, significantly higher than what is required for solid Bi interfaces.
Recent advances in manipulating plasmonic properties of metal/semiconductor heterostructures have opened up new avenues for basic research and applications. Herein, we present a versatile strategy for the assembly of arrays of plasmonic metal/semiconductor hemispherical nano-heterostructures (MSHNs) with control over spacing and size of the metal/semiconductor heterostructure array, which can facilitate a wide range of scientific studies and applications. The strategy combines nanosphere lithography for generating the metal core array with solution-based chemical methods for the semiconductor shell that are widely available and kinetically controllable. Periodic arrays of Au/Cu 2 O and Ag/Cu 2 O heterostructures are synthesized to demonstrate the approach and highlight the versatility and importance of the tunability of plasmonic properties. The morphology, structure, optical properties, and elemental compositions of the heterostructures were analyzed. Finally, this strategy can be important for understanding and manipulating fundamental nanoscale solid-state physical and chemical properties, as well as assembling heterostructures with desirable structure and functionality for applications.