Photovoltaic cable jackets A comparison of representative products using combined-accelerated stress testing
Not Available
Miller, David C. (ORCID:0000000246985277)↗
Engineering topics
Jiang, Chun-Sheng
Publications and source records attributed to Jiang, Chun-Sheng.
Ex situ bismuth doping for efficient CdSeTe thin-film solar cells with open-circuit voltages exceeding 900 mV
We dope CdTe solar cells with Bi after the device structure is completed using a solution process.
CdTe solar cell↗
Evaporated CdSe for Efficient Polycrystalline CdSeTe Thin-Film Solar Cells
Recent progress has shown that alloying cadmium telluride (CdTe) with cadmium selenide (CdSe) to create a CdSexTe1-x (CdSeTe) gradient region can significantly boost the performance of polycrystalline CdSeTe thin-film solar cells. However, improper CdSeTe alloying might introduce problematic band alignment and deleterious voids at the front interface, limiting the benefit maximization of this technique. Here, we show that the CdSe layers deposited by thermal evaporation result in CdSeTe cells with a higher performance than the sputtered CdSe. This is because evaporated CdSe can avoid the formation of voids at the front interface, producing improved front junction quality with suppressed front junction nonradiative recombination. The champion cell using evaporated CdSe demonstrated a power conversion efficiency (PCE) of 19.7%, much higher than 18.1% in the cell using sputtered CdSe.
cadmium selenide↗
Characterization of pitch carbon coating properties affecting the electrochemical behavior of silicon nanoparticle lithium-ion battery anodes
Silicon is an exciting material for next-generation lithium-ion battery anodes, due to its high theoretical capacity and availability, but its widespread implementation has been limited by extensive volume changes during cycling that causes mechanical damage and limits cycle life. One approach to mitigating these deleterious effects while still maintaining silicon's benefits is the addition of a pitch carbon coating to nanometer-sized silicon particles. Here, in this study, we present characterization of pitch-coated silicon electrodes without annealing and annealed at 700 °C and 1000 °C to determine the optimum temperature treatment, as well as pitch-only and silicon-only electrodes with and without annealing to elucidate the impacts of each component on early electrochemical behavior. Using Fourier transform infrared and Raman spectroscopies, atomic force and scanning spreading resistance microscopy, and electrochemical analysis, we find 700 °C to be the optimal annealing temperature, as amorphous carbon is created, which improves conductivity prior to cycling and facilitates ion storage during cycling that increases capacity. We also present in situ Raman spectroscopy data demonstrating the heterogeneous aging that occurs across the electrode surface during cycling.
25 ENERGY STORAGE↗
Photovoltaic Cable Connectors: A Comparative Assessment of the Present State of the Industry
The consequences of failure for balance-of-systems components (such as photovoltaic (PV) cable connectors) include offline module string(s); low system voltage; arc, ground, insulation, and overtemperature faults; triggered fuse(s); system shutdown; and fire. The degradation modes for connectors are studied here through an industry survey and its subsequent examination, which are compared with field-degraded specimens. A total of 117 specimens were obtained from a variety of locations and climates or accelerated tests. A failure analysis for connectors from PV installations was developed (and applied to 54 specimens), including nondestructive examinations (photography, a custom resistance-current scan, and X-ray computed tomography) and destructive examinations (featuring milling of the external plastic, extraction of the internal convolute spring, and potting and polishing in cross section). Surface and through-thickness composition of the metal pins and springs was quantified using scanning electron microscopy with energy-dispersive X-ray spectroscopy. Fourier transform infrared spectroscopy was used to verify the base polymer materials and compare the chemical structure of the connector body, bushing, end nut, and o-ring. Thermogravimetric analysis and differential scanning calorimetry were used to further verify the degradation of the same polymeric components.
cable connectors↗
Room-temperature spin injection across a chiral perovskite/III–V interface
Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of optoelectronic functionality. Current efforts are limited owing to inherent inefficiencies associated with spin injection across semiconductor interfaces. Here we demonstrate spin injection across chiral halide perovskite/III-V interfaces achieving spin accumulation in a standard semiconductor III-V (Al x Ga 1-x ) 0.5 In 0.5 P multiple quantum well light-emitting diode. The spin accumulation in the multiple quantum well is detected through emission of circularly polarized light with a degree of polarization of up to 15 ± 4%. The chiral perovskite/III-V interface was characterized with X-ray photoelectron spectroscopy, cross-sectional scanning Kelvin probe force microscopy and cross-sectional transmission electron microscopy imaging, showing a clean semiconductor/semiconductor interface at which the Fermi level can equilibrate. Finally, these findings demonstrate that chiral perovskite semiconductors can transform well-developed semiconductor platforms into ones that can also control spin.
14 SOLAR ENERGY↗
Blended 1D carbon nanostructures synergistically enhance electron and ion transport in silicon nanoparticle electrodes
Not Available
1D carbon nanostructure↗
Photovoltaic Cable Connectors: A Comparative Assessment of the Present State of the Industry [Slides]
The consequences of failure for balance of systems (BoS) components (such as PV cable connectors) include offline module string(s); low system voltage; arc, ground, insulation, and over-temperature faults; triggered fuse(s); system shutdown; and fire. The degradation modes for connectors are studied here through an industry survey and its subsequent examination, which are compared to field-degraded specimens. 117 specimens were obtained from a variety of locations and climates or accelerated tests. A failure analysis for connectors from PV installations was developed (and applied to 54 specimens) including nondestructive examinations (photography, a custom resistance-current scan, and X-ray computed tomography) and destructive examinations (featuring milling of the external plastic, extraction of the internal convolute spring, and potting and polishing in cross-section). Surface and through-thickness composition of the metal pins and springs was quantified using scanning electron microscopy with energy-dispersive X-ray spectroscopy. Fourier-transform infrared spectroscopy was used to verify the base polymer materials and compare the chemical structure of the connector body, bushing, end nut, and o-ring. Thermogravimetric analysis and differential scanning calorimetry were used to further verify the degradation of the same polymeric components. Updated from 2023 NIST/UL Workshop on Photovoltaic Materials Durability (website: https://events.ul.com/WPMogn?rt=aAuoWsl4E0KaORLCMeOgfA) and 2024 PVRW workshop (https://pvrw.nrel.gov/past-proceedings).
14 SOLAR ENERGY↗
Investigating Electric Field and Light Induced Degradation in Perovskite Solar Cells through Nanometer-Scale Potential Imaging
Electric field and light induced degradations in perovskite solar cells were evaluated through nanometer-scale potential imaging across the device by using in-situ Kelvin probe force microscopy (KPFM). We derived the electric field profile from potential profiles at different bias voltages to evaluate the locations and quality of junctions across the device. We found relative changes in electric field peak intensity at the HTL/perovskite and perovskite/ETL interfaces upon stressing devices separately under voltage or light. KPFM results during 12-hour stress/rest cycling under electrical bias show both reversible and irreversible changes in the device's interfacial fields. We also observed change in the electric field profile between control and degraded devices after 100 hours of stress/rest cycling under light. Our results demonstrate how nanometer-scale potential imaging can be used to understand the impacts of external electric fields and light soaking on both irreversible degradation and reversible metastability in perovskite solar cells.
Kelvin probe force microscopy↗
In-Situ Photostability Analysis of Perovskite Solar Cells by Time-Evolving Photoluminescence Imaging
In this work we investigate reversible metastabilities and irreversible degradation due to light soaking of triple-cation mixed-halide perovskite p-i-n solar cells. We use spatially resolved luminescence imaging to document the spatial inhomogeneities that exist even in high-performance devices with median efficiencies >20%. We monitor light-soaking degradation in-situ using time-evolving photoluminescence images, electro-luminescence images, and transient photovoltage. Post-stress measurements of external quantum efficiency and Kelvin- probe force microscopy suggest that long-term degradation primarily affects electrode interfaces rather than the absorber layer.
electroluminescence↗
Accelerated Aging of PV Cables - The Development of Methods Towards Combined-Accelerated Stress Testing
PV cables allow the collection and distribution of electricity from modules to the energy grid. Durable cabling allows continuous operation of PV installations. Cables with a life less than that of the modules must be replaced - reducing electricity generation and adding to the system operating expense. We have examined the durability of a variety of representative cable samples using artificial UV weathering (IEC TS 62788-7-2) and combined accelerated stress testing (C-AST). Jackets in this study include PV-rated (polyolefin), building wire (PVC/PA), and multi-conductor (rubber, as in PV trackers), with some examples of black and red cables. Characterizations at read points include appearance (camera and optical microscope), surface roughness (linear profilometry), instrumented indentation, surface morphology (SEM), chemical composition (EDS), thermal decomposition (TGA), phase transition (DSC), crystalline structure (WAXS), and polymer chemical structure (FTIR). Complimentary examinations confirm damage to the external and interior layer(s) of less durable samples, including changes in morphology (e.g., cracking), chemistry (e.g., oxidation), structure, and mechanical performance (e.g., through-thickness modulus and hardness). The results may be generally compared to other examples from the field (PV installations) or after accelerated testing (IEC 61215). The methods in this study are presently being applied in a follow-on C-AST study, incorporating both dynamic and kinematic fixtures.
balance of systems↗
Sulfur Polymers as Flexible Interfacial Additives for Low Stack-Pressure Solid-State Lithium-Ion Batteries
Solid-state batteries (SSBs) fabricated using sulfide solid electrolytes (SSEs) typically require cell stack-pressures in the range of tens to hundreds of megapascals to maintain effective interfacial contact and lithium-ion mobility across the full cell stack. These relatively high cell stack-pressures necessarily require additional cell components that reduce the delivered volumetric and gravimetric capacities of SSBs. This work has developed a novel sulfur polymer (polyS) that improves lithium-ion conductivity in SSBs at low cell stack-pressures, thereby directly targeting this technological limitation. Specifically, this work shows that polyS can be combined with the argyrodite Li6PS5Cl (LPSC) to form a stable composite SSE. By combining LPSC particles with a flexible additive that enhances interfacial contact at low pressures, this new polyS LPSC composite SSE material greatly improves ionic conductivity at cell stack-pressures below 2.0 MPa in comparison to conventional LPSC composites. Furthermore, this polyS LPSC composite can be used to fabricate a full SSB that cycles reversibly at only 1.6 MPa. Finally, this composite SSE exhibits self-healing behavior when combined with a lithium metal electrode, wherein lithium dendrites are oxidized to form passivating Li2S species that recover the cell from shorting.
ENERGY STORAGE↗
Nanometer-scale electrical potential imaging on absorber of CdSeTe solar cells
Here, we report on nm-scale electrical potential imaging throughout As-doped and Cu-doped CdSeTe absorbers using Kelvin probe force microscopy (KPFM). The potential imaging was conducted both laterally and vertically on beveled films using ion milling at small glancing angle. KPFM images electrical potential on the beveled surface and assesses defect charging in the subsurface region within a screening length from the beveled surface. We found that the grain boundaries were positively charged and that there were significant potential fluctuations in both grain boundary versus grain interior and intragrain. We further found that these potential fluctuations decreased significantly toward the front interface. Time of flight secondary ion mass spectrometry imaging shows that Se content increased toward the front interface, consistent with Se passivation of defects. The potential fluctuation was induced by defect charging, and the results elucidate different details of the defect configurations and grain structures of the films with different CdCl 2 treatment temperatures in the As-doped CdSeTe. The defect configurations in the region near the front interface can be a main factor contributing to the device performance difference. Our potential imaging provides insights about the defects throughout the absorber films, and shows that the potential fluctuation has a direct correlation to the V oc deficit.
14 SOLAR ENERGY↗
Thin-film TaAs: Developing a platform for Weyl semimetal devices
MX monopnictide compounds (M = Nb,Ta, X = As,P) are prototypical 3D Weyl semimetals (WSMs) that have been shown in bulk single crystal form to have potential for a wide variety of novel devices due to topologically protected band structures and high mobilities. However, very little is known about thin-film synthesis, which is essential to enable device applications. We synthesize TaAs(001) epilayers by molecular beam epitaxy on GaAs(001) and provide an experimental phase diagram illustrating conditions for single-phase, single-crystal-like growth. We investigate the relationship between nanoscale defects and electronic structure using angle-resolved photoemission spectroscopy, kelvin probe force microscopy, and transmission electron microscopy. Our results provide a roadmap and platform for developing 3D WSMs for device applications.
36 MATERIALS SCIENCE↗
Electrical Analysis of Pulsed Laser Annealed Poly-Si: Ga/SiOx Passivating Contacts
In this contribution, we examine Ga hyper-doped poly-Si/SiOx contacts realized by pulsed laser melting (PLM). Here, we use Ga as a novel p-type dopant and B as a conventional dopant to induce non-equilibrium doping using an excimer laser. We perform simulations to visualize the maximum melt depth profiles within the poly-Si, with a goal of distributing dopants close to the tunneling oxide, but at the same time preserving the passivation. Hall measurements show that sheet resistance for B is lower than Ga due to its higher solid solubility limit in Si. After comparing the Hall active dopant concentration with the chemical concentration obtained by SIMS measurement, we show nearly 100% activation B activation reaching 10^21 cm-3, while only ~20% activation for Ga. Nevertheless, we achieve active doping concentrations of Ga in poly-Si six times higher than its solid solubility limit in Si (~10^19 cm-3). We compare our Hall mobilities with values in the literature for c-Si and show that B mobilities in laser-treated poly-Si are close to that of the literature value for B, while Ga mobilities are lower, possibly due to additional scattering channels within grain boundaries and deformed lattice. We also compare our results on PLM samples with conventional furnace annealed samples, and we show much higher percent activation and mobilities. Previously, we showed a low contact resistivity of 35.5 +/- 2.4 m..omega..cm2. Here, we further confirm this result by scanning spreading resistance microscopy and Kelvin force nanoprobe microscopy. We demonstrate that our poly-Si: Ga/nCz contact exhibits large drift and diffusion currents under normal cell operating voltage, which widens the laser processing window for a good metal/poly-Si/c-Si contact.
high-efficiency solar cells↗
Pinhole electrical conductivity in polycrystalline Si on locally etched SiN$_y$/SiO$_x$ passivating contacts for Si solar cells
State-of-the-art monocrystalline Si (c-Si) solar cells require passivating contacts to achieve a high degree of charge-carrier separation and collection. In this work, we focus on boron-doped polycrystalline Si on locally etched silicon nitride/silicon oxide (PLENO) passivating contacts. In PLENO contacts, excellent surface passivation is provided by the ~10 nm dielectric bilayer, while pinholes in the dielectric bilayer, that are filled with doped polycrystalline Si, provide charge-carrier selectivity and transport. During PLENO fabrication, etch undercut in the dielectric bilayer occurs. Here, using electrical characterization and microscopies, we show that undercut causes pinholes to be electrically resistive in PLENO. A processing sequence that eliminates the undercut in the final PLENO structure results in electrically conductive pinholes with low contact resistivity.
14 SOLAR ENERGY↗
Operando Characterizations of Light-Induced Junction Evolution in Perovskite Solar Cells
Not Available
14 SOLAR ENERGY↗