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Jiang, G.

Publications and source records attributed to Jiang, G..

Regulation of connexin 43 expression in human gingival fibroblasts

Highlights: ●Wound healing-associated cytokines modulate connexin 43 abundance in human gingival fibroblasts. ●Interplay between these cytokines distinctly determines connexin 43 abundance via transcriptional/post-transcriptional and translational/post-translational mechanisms. ●TGF-β-induced upregulation of connexin 43 is mediated by SMAD2/3 pathway. ●TNF-α, IL-1β, IFN-γ and PGE2 inhibit TGF-β-induced connexin 43 upregulation by suppressing SMAD2/3 phosphorylation. Abundance of connexin 43 (Cx43), a transmembrane protein that forms hemichannels (HCs) and gap junctions (GJs), is dynamically regulated in human gingival fibroblasts (GFBLs) during wound healing. This may be important for fast and scarless gingival wound healing as Cx43 is involved in key cell functions important during this process. Our aim was to uncover the factors that regulate Cx43 expression and abundance in GFBLs. We hypothesized that cytokines and growth factors released during wound healing coordinately regulate Cx43 abundance in GFBLs.

60 APPLIED LIFE SCIENCES↗

The effects of vacuum ultraviolet radiation on low-k dielectric films

Plasmas, known to emit high levels of vacuum ultraviolet (VUV) radiation, are used in the semiconductor industry for processing of low-k organosilicate glass (SiCOH) dielectric device structures. VUV irradiation induces photoconduction, photoemission, and photoinjection. These effects generate trapped charges within the dielectric film, which can degrade electrical properties of the dielectric. The amount of charge accumulation in low-k dielectrics depends on factors that affect photoconduction, photoemission, and photoinjection. Changes in the photo and intrinsic conductivities of SiCOH are also ascribed to the changes in the numbers of charged traps generated during VUV irradiation. The dielectric-substrate interface controls charge trapping by affecting photoinjection of charged carriers into the dielectric from the substrate. The number of trapped charges increases with increasing porosity of SiCOH because of charge trapping sites in the nanopores. Modifications to these three parameters, i.e., (1) VUV induced charge generation, (2) dielectric-substrate interface, and (3) porosity of dielectrics, can be used to reduce trapped-charge accumulation during processing of low-{kappa} SiCOH dielectrics. Photons from the plasma are responsible for trapped-charge accumulation within the dielectric, while ions stick primarily to the surface of the dielectrics. In addition, as the dielectric constant was decreased by adding porosity, the defect concentrations increased.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗