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Jiang, H. X.

Publications and source records attributed to Jiang, H. X..

9 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Fundamental optical transitions in hexagonal boron nitride epilayers

Fundamental optical transitions in hexagonal boron nitride (h-BN) epilayers grown on sapphire by metal–organic chemical vapor deposition (MOCVD) using triethylboron as the boron precursor have been probed by photoluminescence (PL) emission spectroscopy. The low temperature (10 K) PL spectrum exhibits two groups of emission lines. The first group includes the direct observation of the free exciton and impurity bound exciton (BX) transitions and phonon replicas of the BX transition, whereas the second group is attributed to the direct observation of the band-to-band transition and its associated phonon replicas. The observations of zero-phonon lines of the band-to-band and exciton transitions, which are supposedly forbidden or “dark” in perfect h-BN crystals, result from a relaxed requirement of momentum conservation due to symmetry-breaking in the presence of high concentrations of impurities/defects and strain, which in turn provided more deterministic values of the energy bandgap (E g ), exciton binding energy (E x ), and binding energy of impurity bound excitons (E BX ) in h-BN epilayers. Excitonic parameters of h-BN epilayers grown by MOCVD, carbon-free chemical vapor deposition, and high purity h-BN bulk materials are compared and discussed. The present results, together with available information in the literature, represent a significant improvement in the understanding of the fundamental optical properties and excitonic parameters of h-BN ultrawide bandgap semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Boron nitride neutron detector with the ability for detecting both thermal and fast neutrons

The detection of fast neutrons is regarded technically challenging because the interaction probability of fast neutron with matter is extremely low. Based on our recent development of hexagonal boron nitride (BN) semiconductor thermal neutron detectors with a record high efficiency of 59%, we report here the feasibility studies of BN detectors for detecting fast neutrons. A BN detector with a detection area of 2.1 cm 2 was fabricated from a 90 $μ$m thick BN epilayer. In the presence of a bare Cf-252 source emitting fast neutrons ranging from 1 to 9 MeV, the detection efficiency was estimated to be about 0.1%. Furthermore, the measured mean free path of fast neutron in BN is about 7.6 cm. Together with the capability of BN for thermal neutron detection, the present results indicate that by incorporating BN with a large thickness, BN neutron detectors are expected to possess the unique capability of directly detecting thermal to fast neutrons as well as outstanding features resulting from the ultrawide bandgap of BN. The identification of a single material that is sensitive to both thermal and fast neutrons is valuable for the development of novel neutron detection technologies.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Charge collection and trapping mechanisms in hexagonal boron nitride epilayers

Understanding charge collection and trapping mechanisms is crucial for using hexagonal boron nitride (h-BN) as active layers for many photonic and electronic devices such as deep UV detectors and emitters, neutron detectors, and single photon emitters. Charge collection and trapping mechanisms in h-BN epilayers have been investigated by probing impurity related optical emissions under an applied electrical field. Our results suggested that the existence of oxygen impurities affects the charge collection efficiency and results in an additional emission peak at 3.75 eV, corresponding to a donor-acceptor pair (DAP) recombination involving O N (oxygen residing on the nitrogen site) donors and the V B -H (boron vacancy bonded with hydrogen complex) deep level acceptors. Experimental results further revealed that the applied electric field induces an anti-correlation between the emission intensity of the DAP transition and the charge collection efficiency from which it was shown that it is possible to find an expression to quantitatively measure the maximum charge collection efficiency in h-BN. The results introduce not only a coherent picture for the relationship between common impurities in h-BN and charge collection and trapping mechanisms but also useful insights into possible approaches to improve the quality, purity, and charge collection of the h-BN epilayers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Charge collection in h -BN neutron detectors at elevated temperatures

Many of the neutron detector applications are in the environments with harsh conditions such as high temperatures. We report here the measurements of charge collection parameters of hexagonal boron nitride (h-BN) detectors at elevated temperatures, including the electron mobility-lifetime product (μτ) and surface recombination field (s/μ). It was found that μτ is increased, while s/μ is decreased as temperature increases. The temperature dependence of the surface recombination field (s/μ) revealed that electrons trapped in the surface states tend to thermally activate to the bulk region at higher temperatures with an activation energy of about 0.22 eV, leading to a reduction in the density of the charged surface states at elevated temperatures. Consequently, the charge collection efficiency is enhanced at elevated temperatures due to a reduced surface recombination field and increased electron mobility-lifetime product. The results suggested that h-BN neutron detectors are favorable for high temperature operation.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Hexagonal boron nitride: Epitaxial growth and device applications

As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-BN supports unusually strong optical transitions near the band edge and a large exciton binding energy on the order of 0.7 eV. Since the isotope of B-10 has a large capture cross-section for thermal neutrons, h-BN is an ideal material for the fabrication of solid-state neutron detectors for special nuclear materials detection, well and geothermal logging, and medical imaging applications. Freestanding B-10 enriched h-BN (h- 10 BN) epilayers with varying thicknesses up to 200 μm have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) as of this writing. By utilizing the conductivity anisotropy nature of h-BN, 1 cm 2 lateral detectors fabricated from 100 μm thick h-10BN epilayers have demonstrated a detection efficiency of 59% for thermal neutrons, which is the highest on record among all solid-state neutron detectors as of today. It was noted that high growth temperatures, long growth times and the use of sapphire substrate tend to incorporate oxygen related impurities into h- 10 BN epilayers, which strongly impacted the carrier mobility-lifetime (μτ) products and charge collection efficiencies of h- 10 BN neutron detectors. As the h-BN material technology further develops, improved carrier mobilities and μτ products will allow the fabrication of h-BN devices with enhanced performance.

42 ENGINEERING↗
DOE OSTI2020

High efficiency hexagonal boron nitride neutron detectors with 1 cm 2 detection areas

We report the realization of 1 cm 2 hexagonal boron nitride (h-BN) thermal neutron detectors with an unprecedented detection efficiency of 59%. This was achieved through improvements in material quality, as reflected in a sixfold enhancement in the electron mobility and lifetime product and a threefold reduction in the surface recombination field, which resulted in a higher detection efficiency at a lower applied electric field over that of a previous state-of-the-art lateral detector with a detection area of 30 mm 2 . The attainment of 1 cm 2 h-BN neutron detectors capable of retaining a high detection efficiency represents a significant milestone toward the practical applications of h-BN detectors.

42 ENGINEERING↗
DOE OSTI2020

Probing the surface oxidation process in hexagonal boron nitride epilayers

Thermal neutron detectors based on hexagonal boron nitride ( h -BN) epilayers have demonstrated a record high efficiency among solid-state detectors at 58%. It was found that the performance of h -BN detectors is profoundly influenced by charge recombination at the surfaces. The dynamic process of surface oxidation in h -BN epilayers has been probed by x-ray photoelectron spectroscopy. The spectra of high-resolution (0.1 eV) scans indicated that the linewidth of the B 1s peak at 190.6 eV increased and the peak intensity decreased with an increase in exposure time in-air (t air ). The main B 1s peak at 190.6 eV evolved into multiple peaks at a higher binding energy position due to oxygen impurities tending to occupy nitrogen sites and form the B–O bond. Time constants of the oxidation process have been determined, revealing that the formation process of the B–O bond is very fast and within minutes in h -BN. The results suggest that reducing nitrogen vacancy generation during growth and employing surface treatment techniques would further improve the performance of h -BN devices.

2D materials↗
DOE OSTI2020

Anisotropic index of refraction and structural properties of hexagonal boron nitride epilayers probed by spectroscopic ellipsometry

The anisotropic index of refraction of 200 μm thick boron-10 enriched hexagonal boron nitride (h-BN) freestanding epilayers grown by metalorganic chemical vapor deposition has been measured using spectroscopic ellipsometry in the UV (4.0–5.1 eV) spectral range. It was found that the index of refraction for the polarization mode with an electric field perpendicular to the c-axis (ordinary, n o ) is much higher than that with an electric field parallel to the c-axis (extraordinary, n e ). By inclusion of turbostratic- (t-) phase layers within h-BN having an average inclination angle (θ) with respect to the ideal c-plane, a simple method for quantifying θ has been deduced. Our results revealed that the presence of t-phase layers decreases the optical anisotropy of h-BN and that a signature of improved crystalline quality is an increase in the ordinary index of refraction (n o ) as a result of the average incline angle θ approaching 0° and predicted that n o = 2.7 and n e = 1.5 at 280 nm for single crystalline h-BN epilayers. More importantly, our results demonstrated that spectroscopic ellipsometry is an effective technique for characterizing the crystalline quality of h-BN epilayers with the advantages of being noninvasive and highly sensitive.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗