Search NASA⌕ Search

Engineering topics

Jiao, Haoyang

Publications and source records attributed to Jiao, Haoyang.

Barrier reinforcement for enhanced perovskite solar cell stability under reverse bias

Stability of perovskite solar cells (PSCs) under light, heat, humidity and their combinations have been notably improved recently. However, PSCs have poor reverse-bias stability that limits their real-world application. Here we report a systematic study on the degradation mechanisms of p-i-n structure PSCs under reverse bias. The oxidation of iodide by injected holes at the cathode side initialize the reverse-bias-induced degradation, then the generated neutral iodine oxidizes metal electrode such as copper, followed by drift of Cu+ into perovskites and its reduction by injected electrons, resulting in localized metallic filaments and thus device breakdown. A reinforced barrier with combined lithium fluoride, tin oxide and indium tin oxide at the cathode side reduces device dark current and avoids the corrosion of Cu0. It dramatically increases breakdown voltage to above -20 V and improved the T90 lifetime of PSCs to ~1,000 h under -1.6 V. The modified minimodule also maintained over 90% of its initial performance after 720 h of shadow tests.

degradation mechanisms↗

Strong-Bonding Hole-Transport Layers Reduce Ultraviolet Degradation of Perovskite Solar Cells

The light-emitting diodes (LEDs) used in indoor testing of perovskite solar cells do not expose them to the levels of ultraviolet (UV) radiation that they would receive in actual outdoor use. We report degradation mechanisms of p-i-n-structured perovskite solar cells under unfiltered sunlight and with LEDs. Weak chemical bonding between perovskites and polymer hole-transporting materials (HTMs) and transparent conducting oxides (TCOs) dominate the accelerated A-site cation migration, rather than direct degradation of HTMs. An aromatic phosphonic acid, [2-(9-ethyl-9H-carbazol-3-yl)ethyl]phosphonic acid (EtCz3EPA), enhanced bonding at the perovskite/HTM/TCO region with a phosphonic acid group bonded to TCOs and a nitrogen group interacting with lead in perovskites. A hybrid HTM of EtCz3EPA with strong hole-extraction polymers retained high efficiency and improved the UV stability of perovskite devices, and a champion perovskite minimodule-independently measured by the Perovskite PV Accelerator for Commercializing Technologies (PACT) center-retained operational efficiency of >16% after 29 weeks of outdoor testing.

14 SOLAR ENERGY↗

Lead-chelating hole-transport layers for efficient and stable perovskite minimodules

The defective bottom interfaces of perovskites and hole-transport layers (HTLs) limit the performance of p-i-n structure perovskite solar cells. We report that the addition of lead chelation molecules into HTLs can strongly interact with lead(II) ion (Pb 2+ ), resulting in a reduced amorphous region in perovskites near HTLs and a passivated perovskite bottom surface. Here, the minimodule with an aperture area of 26.9 square centimeters has a power conversion efficiency (PCE) of 21.8% (stabilized at 21.1%) that is certified by the National Renewable Energy Laboratory (NREL), which corresponds to a minimal small-cell efficiency of 24.6% (stabilized 24.1%) throughout the module area. Small-area cells and large-area minimodules with lead chelation molecules in HTLs had a light soaking stability of 3010 and 2130 hours, respectively, at an efficiency loss of 10% from the initial value under 1-sun illumination and open-circuit voltage conditions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Perovskite grain wrapping by converting interfaces and grain boundaries into robust and water-insoluble low-dimensional perovskites

Stabilizing perovskite solar cells requires consideration of all defective sites in the devices. Substantial efforts have been devoted to interfaces, while stabilization of grain boundaries received less attention. Here, we report on a molecule tributyl(methyl)phosphonium iodide (TPI), which can convert perovskite into a wide bandgap one-dimensional (1D) perovskite that is mechanically robust and water insoluble. Mixing TPI with perovskite precursor results in a wrapping of perovskite grains with both grain surfaces and grain boundaries converted into several nanometer-thick 1D perovskites during the grain formation process as observed by direct mapping. The grain wrapping passivates the grain boundaries, enhances their resistance to moisture, and reduces the iodine released during light soaking. The perovskite films with wrapped grains are more stable under heat and light. The best device with wrapped grains maintained 92.2% of its highest efficiency after light soaking under 1-sun illumination for 1900 hours at 55°C open-circuit condition.

14 SOLAR ENERGY↗

High grain boundary recombination velocity in polycrystalline metal halide perovskites

Understanding carrier recombination processes in metal halide perovskites is fundamentally important to further improving the efficiency of perovskite solar cells, yet the accurate recombination velocity at grain boundaries (GBs) has not been determined. Here, we report the determination of carrier recombination velocities at GBs (S GB ) of polycrystalline perovskites by mapping the transient photoluminescence pattern change induced by the nonradiative recombination of carriers at GBs. Charge recombination at GBs is revealed to be even stronger than at surfaces of unpassivated films, with average S GB reaching 2200 to 3300 cm/s. Regular surface treatments do not passivate GBs because of the absence of contact at GBs. We find a surface treatment using tributyl(methyl)phosphonium dimethyl phosphate that can penetrate into GBs by partially dissolving GBs and converting it into one-dimensional perovskites. It reduces the average S GB by four times, with the lowest SGB of 410 cm/s, which is comparable to surface recombination velocities after passivation.

36 MATERIALS SCIENCE↗

Efficient monolithic all-perovskite tandem solar modules with small cell-to-module derate

All-perovskite tandem solar modules are promising to reduce the cost of photovoltaic systems with their high efficiency and solution fabrication, but their sensitivity to air still imposes a great challenge. Here a hot gas-assisted blading method is developed to accelerate the perovskite solidification, forming compact and thick narrow bandgap (NBG) perovskite films. Adding a reduction agent into NBG films followed by a short period of air exposure and a post-fabrication storage surprisingly increases carrier recombination lifetime and enables laser scribing in ambient conditions without obvious loss of device performance. This combination suppresses tin and iodide oxidation and forms a thin SnO 2 layer on the NBG film surface. Monolithic all-perovskite tandem solar modules showed a champion efficiency of 21.6% with a 14.3 cm 2 aperture area, corresponding to an active area efficiency of 23.0%. Lastly, the very small cell-to-module derate of 6.5% demonstrates the advantage of a tandem monolithic structure for solar modules.

14 SOLAR ENERGY↗

Stabilizing perovskite-substrate interfaces for high-performance perovskite modules

The interfaces of perovskite solar cells (PSCs) are important in determining their efficiency and stability, but the morphology and stability of imbedded perovskite-substrate interfaces have received less attention than have top interfaces. We found that dimethyl sulfoxide (DMSO), which is a liquid additive broadly applied to enhance perovskite film morphology, was trapped during film formation and led to voids at perovskite-substrate interfaces that accelerated the film degradation under illumination. Partial replacement of DMSO with solid-state carbohydrazide reduces interfacial voids. A maximum stabilized power conversion efficiency (PCE) of 23.6% was realized for blade-coated p-type/intrinsic/n-type (p-i-n) structure PSCs with no efficiency loss after 550-hour operational stability tests at 60°C. The perovskite mini-modules showed certified PCEs of 19.3 and 19.2%, with aperture areas of 18.1 and 50.0 square centimeters, respectively.

Chen, Shangshang↗