Engineering topics
Jin, Zehua
Publications and source records attributed to Jin, Zehua.
Revealing Structural Evolution of Single Atom Catalysts during Electrochemical CO 2 Reduction by in Situ X-ray Absorption Spectroscopy
Investigating the structural variation of single-atom catalysts (SACs) is crucial to reveal the reaction mechanism under working conditions. Different in situ techniques, especially X-ray absorption spectroscopy (XAS), have been reported to study the structural changes in active sites. However, a systematic study of the relationship between the coordination environment and the catalytic ability of different kinds of SACs is still lacking. Herein, we established isolated transition metal atoms (Fe, Co, Ni, Cu) on N-doped carbon (M-N-C) and employed them in electrocatalytic CO 2 reduction reaction (CO 2 RR). Significantly, Ni-N-C exhibits the highest selectivity (similar to 97.9%) toward CO at -0.8 V vs RHE. In situ XAS characterization discloses the coordination number dependent catalytic performance. Further, the decreased average coordination number of Ni in Ni-N-C at the voltage point with maximum Faradaic efficiency was observed. Density functional theory further provides the possible mechanism of CO 2 -to-CO over the undercoordinated Ni-N-C structure.
Crowded supported metal atoms on catalytically active supports may compromise intrinsic activity: A case study of dual-site Pt/α-MoC catalysts
Increasing the surface population of supported catalytic sites, assuming these sites are stable, is considered a straightforward approach to improving the overall catalytic performance. Here, we report an exception represented by the Pt/α-MoC catalysts featuring atomically dispersed Pt. The Pt/α-MoC catalysts display very high activity for the reverse water gas shift reaction with near 100% CO selectivity for CO 2 :H 2 ratios from 0.25 to 4 and from 250 to 400 °C. Despite the excellent performance, the intrinsic activity per Pt-centric catalytic center declines as the Pt loading increases from 0.1 to 1.0 wt%. With the dispersed Pt evolving from isolated atoms to fully exposed ensembles, the shrinking inter-Pt-atom space impedes CO 2 activation at the critical Pt-Mo interfaces, where the Pt shall temporarily take the -O intermediates. The Pt, even as atomically dispersed without noticeable sintering, is underutilized in such a crowded state. This caution for high-loading catalyst design is translational to other systems where the direct catalytic roles of the supports are crucial.
High surface area magnetic double perovskite La 2 AlFeO 6 as an efficient and stable photo-Fenton catalyst under a wide pH range
Photo-Fenton process is an efficient way to treat the organic pollutants in wastewater. However, the efficiency is limited by serious leaching of iron ion, separation of spent catalyst from reaction system for facile recycling, low (pH<4) reaction environment. Herein, we report a preparation of a novel magnetic double perovskite photocatalyst La2AlFeO6, and refractory organic pollutants like phenol, etc. were used as probes to test the efficiency of catalyst. The results showed that the catalytic material retained high surface area and high ratio of Fe 3+ on its surface, and the generated ·OH, ·O 2 - and 1 O 2 lead to a highly photocatalytic efficiency even at neutral pH condition. In addition, the as prepared double perovskite photocatalyst La 2 AlFeO 6 also exhibits excellent stable and magnetic properties. There is no iron ion leaching detected during the courses of the reaction. Furthermore, the spent catalyst can be separated by magnetic field easily, and thus can be reused after simple air drying without any further treatment or calcination.
Low Contact Barrier in 2H/1T' MoTe 2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition
Metal–semiconductor contact has been an important topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. Here, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe 2 ) planarly contacted by its metallic phase (1T' MoTe 2 ). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe 2 films, including pure 2H phase or 1T' phase, and 2H/1T' in-plane heterostructure. Theoretical simulation reflects a lower Schottky barrier in 2H/1T' junction than in Ti/2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal–semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits.