Search NASA⌕ Search

Engineering topics

Jo, Masafumi

Publications and source records attributed to Jo, Masafumi.

Recent developments in droplet epitaxy

The droplet epitaxy allows for self-assembly of lattice-matched GaAs quantum dots (QDs) with high quality and high uniformity. In this article, we show our efforts to realize the GaAs QDs with excellent optical properties. After the optimization of the several growth processes, we achieved current-injection lasing in the GaAs QDs. In addition, formation of further advanced nanostructure is presented.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen δ-doping technique

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen δ-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen δ-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

77 NANOSCIENCE AND NANOTECHNOLOGY↗