Engineering topics

Johnson, Gregory A.

Publications and source records attributed to Johnson, Gregory A..

3 records

NASA NTRS1993

Potassium-Rankine Power Conversion Subsystem Modeling for Nuclear Electric Propulsion

A potassium-Rankine power conversion system model was developed under Contract No. NAS3-25808 for the NASA-LeRC. This model predicts potassium-Rankine performance for turbine inlet temperatures (TIT) from 1200 - 1600 K, TIT to condenser temperature ratios from 1.25-1.6, power levels from 100 to 10,000 kWe, and lifetimes from 2-10 years. The model is for a Rankine cycle with reheat for turbine stage moisture control. The model assumes heat is supplied from a lithium heat transport loop. The model does not include a heat source or a condenser/heat rejection system model. These must be supplied by the user.

Johnson, Gregory A.↗

NASA NTRS1991

Indium gallium arsenide microwave power transistors

Depletion-mode InGaAs microwave power MISFETs with 1-micron gate lengths and up to 1-mm gate widths have been fabricated using an ion-implantation process. The devices employed a plasma-deposited silicon/silicon dioxide gate insulator. The dc I-V characteristics and RF power performance at 9.7 GHz are presented. The output power, power-added efficiency, and power gain as a function of input power are reported. An output power of 1.07 W with a corresponding power gain and power-added efficiency of 4.3 dB and 38 percent, respectively, was obtained. The large-gate-width devices provided over twice the previously reported output power for InGaAs MISFETs at X-band. In addition, output power stability within 1.2 percent over 24 h of continuous operation was achieved. In addition, a drain current drift of 4 percent over 10,000 sec was obtained.

Johnson, Gregory A.↗

NASA NTRS1991

Plasma-deposited germanium nitride gate insulators for indium phosphide metal-insulator-semiconductor field-effect transistors

Plasma-deposited germanium nitride was investigated for the first time as a possible gate insulator for InP compound semiconductor metal-insulator-semiconductor FET (MISFET) technology. The germanium nitride films were successfully deposited in a capacitively coupled parallel plate reactor at 13.56 MHz operation using GeH4/N2/NH3 and GeH4/N2 mixtures as reactant gases. The former process produced better quality films with enhanced uniformity, increased deposition rates, and increased resistivity. The breakdown field strength of the films was greater than 10 to the 6th V/cm. Auger electron spectroscopy did not indicate significant chemical composition differences between the two processes. For MISFETs with 2-micron channel lengths fabricated on InP, the device transconductance and threshold voltage for the GeH4/N2/NH3 process were 17 mS/mm and -3.6 V, respectively. The drain-source breakdown voltages were greater than 10 V.

Johnson, Gregory A.↗