Low resistance ohmic contacts to Al-rich, AlGaN lateral transistors by MOCVD growth of heavily doped AlGaN alloys
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Allerman, Andrew Alan↗
Engineering topics
Joishi, Chandan
Publications and source records attributed to Joishi, Chandan.
Al-rich AlGaN alloys for RF and power transistors
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Allerman, Andrew A.↗
Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor
GaN/InGaN microLEDs are a very promising technology for next-generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportunity to control microLED output power with capacitive (voltage)-controlled rather than current-controlled schemes. This approach can greatly reduce system complexity for the driver circuit arrays while maintaining device opto-electronic performance. In this work, we demonstrate a 3-terminal GaN micro-light emitting transistor that combines a GaN/InGaN blue tunneling-based microLED with a GaN n-channel FET. Further, the integrated device exhibits excellent gate control, drain current control, and optical emission control. This work provides a promising pathway for future monolithic integration of GaN FETs with microLED to enable fast switching, high-efficiency microLED display and communication systems.
42 ENGINEERING↗