Addition to “Chemical Compensation Challenges in Processing Antiferroelectric PbZrO 3 Thin Films”
Addition to “Chemical Compensation Challenges in Processing Antiferroelectric PbZrO 3 Thin Films”
thin films↗
Engineering topics
Jones, Lewys [Trinity College Dublin (Ireland)]
Publications and source records attributed to Jones, Lewys [Trinity College Dublin (Ireland)].
Chemical Compensation Challenges in Processing Antiferroelectric PbZrO 3 Thin Films
The electric field-induced antipolar-to-polar phase transition in antiferroelectric materials is accompanied by large changes in the structural and functional response, making them attractive for many applications ranging from pulsed energy capacitors to high-strain-high (blocking-)force actuators, solid-state heating and cooling systems, and optoelectronic devices. PbZrO 3 , as an end member of the PZT, (x)PbZr 1–x Ti x O 3 , solid solution, has been the subject of many studies. However, processing of perovskite PbZrO 3 is extremely challenging due to phase instabilities induced by Pb loss at the temperatures necessary for perovskite crystallization. Here, we discuss the challenges associated with Pb loss, as well as its compensation through bulk Pb overstoichiometry and interfacial PbO additions, in chemical solution processed, highly oriented PbZrO 3 thin films. For both 042 o - and 001 o -oriented (o-orthorhombic distortion) PbZrO 3 thin films, the crystallization interfaces are the most important contributors to Pb loss and off-stoichiometric outcomes, and no single approach was sufficient to address these challenges. Pb-rich and Pb-deficient nonperovskite phases including ZrO x were only observable through microscopic characterization, and X-ray diffraction alone could not rule out the presence of such secondary phases. “Ideal” macroscopic antiferroelectric polarization-electric field double hysteresis curves were observed despite (at times) the large presence of secondary phases. However, reduced saturation polarization and increased phase transition electric fields were observed concomitantly with the presence of secondary phase(s) and tentatively assigned to the voltage drop across the ZrO x nanocrystals. Based on these results, it is imperative that the presence of secondary phases always be addressed (beyond X-ray diffraction spectra) in order to correctly evaluate the properties of antiferroelectric films.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Transmission electron microscopy with in-situ ion irradiation: Facilities and community
Whilst there is a clear scientific and technological need for the technical capabilities of transmission electron microscopes with in-situ ion irradiation, it also requires a collaborative community of international researchers to support such facilities in successfully meeting this demand. Instruments of this type serve to provide fundamental understanding of the mechanisms which drive changes in materials important to nuclear fission and fusion energy, the semiconductor industry, quantum information systems, space travel, astronomy, geology and many more applications. As these areas continue to evolve and the instrumentation possibilities expand, the capacity of in-situ ion irradiation facilities must also develop hand-in-hand with the user community to deliver an ever-greater diversity of high-fidelity extreme-environment experimentation. Future directions for the field, such as miniaturization from MEMS/microfluidic devices and advanced controls with ML-based analysis, continuously emerge to advance both the hardware and software which support the coupling of TEMs with ion beams. This review sets out to provide up-to-date insights into the community and advancement of current, and development of future, facilities which have the potential to further unlock access to the nanoscale exploration of coupled extreme environments crucial to many of the important science and engineering challenges we face today.
In-situ irradiation↗