Engineering topics

Jones, S. H.

Publications and source records attributed to Jones, S. H..

3 records

DOE OSTI2024

Field Validation of Cloud Properties Sensor Field Campaign Report

The purpose of this campaign is to deploy Aerodyne Research Inc.’s extended wavelength cloud optical properties sensor (TWST-EN) in an operationally relevant environment with co-located, validated sensors. The Atmospheric Radiation Measurement (ARM) user facility’s Southern Great Plains (SGP) observatory is ideal for this deployment because of the variety of operational sensors that can measure some of the same cloud properties using different modalities. While cloud property sensors have long existed, they tend to be costly to produce and maintain. Our sensor measures absolute spectral radiance in the two bands and will retrieve cloud optical depth (COD), droplet effective radius, and thermodynamic phase. Our prototype is built predominantly from off-the-shelf components and uses uncooled spectrometers. A lower-cost, easy-to-use sensor such as this could allow deployment at many more sites for greater spatial coverage. Analysis and retrieval algorithm development using the data from this deployment has been a central technical objective of our U.S. Department of Energy Small Business Innovative Research (SBIR) Phase 2 contract (DE-SC0020473: Low-Cost Shortwave Spectroradiometer for Retrieval of Cloud Properties).

54 ENVIRONMENTAL SCIENCES↗

NASA NTRS1994

Midfit dislocation generation mechanisms in InGaAs/GaAs heterostructures

An experimental investigation of misfit dislocation generation mechanisms at an InGaAs/GaAs heterointerface is reported. InGaAs epitaxial layers were grown by low-pressure oragnometallic vapor-phase epitaxy on patterned and unpatterned GaAs substrate having etch-pit densities (EPD) of 200, 1400, and 10,000 cm(exp -2). After epitaxial growth, the samples were annealed at temperatures between 650 and 750 C, and analyzed by optical and transmission electron microscopy. For the range of substrate EPD studied, it was found that the substrate EPD controls the onset of misfit dislocation generation for low-temperature epitaxy (less than 600 C) on unpatterned substrates. When epilayers were annealed at 750 C, the density of misfit dislocations was independent of the substrate EPD. These studies also show that the dominant misfit dislocation generation mechanism for films grown on patterned substrates is nucleation at the growth-mesa edge. The density of preexisting threading dislocations has little influence on misfit dislocation generation for films selectively deposited within 100 x 100 sq micrometer growth windows. For selective heteroepitaxy, misfit dislocation generation strongly depends on the crystallographic orientation of the growth-mesa edge.

Kui, J.↗

NASA NTRS1992

A semi-empirical model for the complete orientation dependence of the growth rate for vapor phase epitaxy - Chloride VPE of GaAs

A semi-empirical model has been developed to determine the complete crystallographic orientation dependence of the growth rate for vapor phase epitaxy (VPE). Previous researchers have been able to determine this dependence for a limited range of orientations; however, our model yields relative growth rate information for any orientation. This model for diamond and zincblende structure materials is based on experimental growth rate data, gas phase diffusion, and surface reactions. Data for GaAs chloride VPE is used to illustrate the model. The resulting growth rate polar diagrams are used in conjunction with Wulff constructions to simulate epitaxial layer shapes as grown on patterned substrates. In general, this model can be applied to a variety of materials and vapor phase epitaxy systems.

Seidel-Salinas, L. K.↗