Search NASA⌕ Search

Engineering topics

Jordan, T. M.

Publications and source records attributed to Jordan, T. M..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Comparison of Measured Dark Current Distributions with Calculated Damage Energy Distributions in HgCdTe

This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distributions were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [1]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Carlo code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. While the nuclear elastic component (also calculated using the MCNPX) contributes only a small fraction of the total nonionizing damage energy, its inclusion in the shape of the damage across the array is significant. The Coulombic contribution was calculated using MRED [3-5], a Geant4 [4,6] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.

Marshall, C. J.↗
NASA NTRS2006

Comparison of Measured Leakage Current Distributions with Calculated Damage Energy Distributions in HgCdTe

This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distribution were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [I]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Car10 code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. The nuclear elastic component (also calculated using the MCNPX) has a negligible effect on the shape of the damage distribution. The Coulombic contribution was calculated using MRED [3,4], a Geant4 [4,5] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.

Marshall, C. J.↗
NASA NTRS1987

Cosmic ray heavy ion LET mapping for aluminum, silicon, and tissue targets

Linear energy transfer (LET) values in aluminum, silicon, and tissue targets have been calculated for 31 galactic cosmic ray ion species in eight different units. The values are described for single event upset (SEU) effect assessments or radiobiological evaluations. The data are presented in graphical and tabular form.

Stassinopoulos, E. G.↗
NASA NTRS1983

Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays

This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.

Brucker, G. J.↗
NASA NTRS1983

The damage equivalence of electrons, protons, alphas and gamma rays in rad-hard MOS devices

This paper reports on a study of damage equivalence in rad-hard MOS devices with 100,000 rads (SiO2) capability. Damage sensitivities for electrons of 1, 2, 3, 5, and 7 MeV, protons of 1, 3, 7, 22, and 40 MeV, 3.4-MeV alphas, and Co-60 gammas were measured and compared. Results indicated that qualitatively the same charge recombination effects occurred in hard oxide devices for doses of 100,000 rads (SiO2) as in soft oxide parts for doses of 1 to 4 krads (SiO2). Consequently, damage equivalency or non-equivalency depended on radiation type and energy. However, recovery effects, both during and after irradiation, controlled relative damage sensitivity and its dependency on total dose, dose rate, supply bias, gate bias, radiation type, and energy. Correction factors can be derived from these data or from similar tests of other hard oxide type, so as to properly evaluate the combined effects of the total space environment.

Stassinopoulos, E. G.↗
NASA NTRS1983

Radiation effects on MOS devices - dosimetry, annealing, irradiation sequence, and sources

This paper reports on some investigations of dosimetry, annealing, irradiation sequences, and radioactive sources, involved in the determination of radiation effects on MOS devices. Results show that agreement in the experimental and theoretical surface to average doses support the use of thermo-luminescent dosimeters (manganese activated calcium fluoride) in specifying the surface dose delivered to thin gate insulators of MOS devices. Annealing measurements indicate the existence of at least two energy levels,,s or a activation energies, for recovery of soft oxide MOS devices after irradiation by electrons, protons, and gammas. Damage sensitivities of MOS devices were found to be independent of combinations and sequences of radiation type or energies. Comparison of various gamma sources indicated a small dependence of damage sensitivity on the Cobalt facility, but a more significant dependence in the case of the Cesium source. These results were attributed to differences in the spectral content of the several sources.

Stassinopoulos, E. G.↗
NASA NTRS1983

Radiation protection for manned space activities

The Earth's natural radiation environment poses a hazard to manned space activities directly through biological effects and indirectly through effects on materials and electronics. The following standard practices are indicated that address: (1) environment models for all radiation species including uncertainties and temporal variations; (2) upper bound and nominal quality factors for biological radiation effects that include dose, dose rate, critical organ, and linear energy transfer variations; (3) particle transport and shielding methodology including system and man modeling and uncertainty analysis; (4) mission planning that includes active dosimetry, minimizes exposure during extravehicular activities, subjects every mission to a radiation review, and specifies operational procedures for forecasting, recognizing, and dealing with large solar flaes.

Jordan, T. M.↗
NASA NTRS1982

The damage equivalence of electrons, protons, and gamma rays in MOS devices

The results of laboratory tests to determine the radiation damage effects induced on MOS devices from Co-60, electron, and proton radiation are reported. The tests are performed to establish the relationship between the Co-60 gamma rays and the level of damage to the MOS devices in regards to different damages which can be expected with the electron and particle bombardments experienced in space applications. CMOS devices were exposed to the Co-60 gamma rays, 1 MeV electrons, and 1 MeV protons while operating at 3, 10, and 15 V. The test data indicated that the Co-60 source was reliable for an initial evaluation of the electron damages up to 2 MeV charge. A correction factor was devised for transferring the Co-60 measurements to proton damages, independent of bias and transistor types, for any orbit or environment.

Brucker, G. J.↗
NASA NTRS1977

Radiation shielding methods

System aids in charged-particle radiation transport analysis and shielding design. System can be adapted for shielding design and analysis in any charged-particle radiation environment.

Davis, H. S.↗
NASA NTRS1976

Improved space radiation shielding methods

The computing software that was used to perform the charged particle radiation transport analysis and shielding design for the Mariner Jupiter/Saturn 1977 spacecraft is described. Electron fluences, energy spectra and dose rates obtained with this software are presented and compared with independent computer calculations.

Davis, H. S.↗
NASA NTRS1972

Shield weight optimization using Monte Carlo transport calculations

Outlines are given of the theory used in FASTER-3 Monte Carlo computer program for the transport of neutrons and gamma rays in complex geometries. The code has the additional capability of calculating the minimum weight layered unit shield configuration which will meet a specified dose rate constraint. It includes the treatment of geometric regions bounded by quadratic and quardric surfaces with multiple radiation sources which have a specified space, angle, and energy dependence. The program calculates, using importance sampling, the resulting number and energy fluxes at specified point, surface, and volume detectors. Results are presented for sample problems involving primary neutron and both primary and secondary photon transport in a spherical reactor shield configuration. These results include the optimization of the shield configuration.

Jordan, T. M.↗
NASA NTRS1970

FASTER 3: A generalized-geometry Monte Carlo computer program for the transport of neutrons and gamma rays. Volume 1: Summary report

The theory used in FASTER-III, a Monte Carlo computer program for the transport of neutrons and gamma rays in complex geometries, is outlined. The program includes the treatment of geometric regions bounded by quadratic and quadric surfaces with multiple radiation sources which have specified space, angle, and energy dependence. The program calculates, using importance sampling, the resulting number and energy fluxes at specified point, surface, and volume detectors. It can also calculate minimum weight shield configuration meeting a specified dose rate constraint. Results are presented for sample problems involving primary neutron, and primary and secondary photon, transport in a spherical reactor shield configuration.

Jordan, T. M.↗
NASA NTRS1970

FASTER 3: A generalized-geometry Monte Carlo computer program for the transport of neutrons and gamma rays. Volume 2: Users manual

A description of the FASTER-III program for Monte Carlo Carlo calculation of photon and neutron transport in complex geometries is presented. Major revisions include the capability of calculating minimum weight shield configurations for primary and secondary radiation and optimal importance sampling parameters. The program description includes a users manual describing the preparation of input data cards, the printout from a sample problem including the data card images, definitions of Fortran variables, the program logic, and the control cards required to run on the IBM 7094, IBM 360, UNIVAC 1108 and CDC 6600 computers.

Jordan, T. M.↗