Engineering topics

Jung, C.

Publications and source records attributed to Jung, C..

4 records

DOE OSTI2025

Long-Distance Window of the Hadronic Vacuum Polarization for the Muon g − 2

We provide the first calculation of the Euclidean long-distance window of the isospin-symmetric light-quark connected contribution to the hadronic vacuum polarization for the muon g − 2 and find a μ LD , iso , conn , ud = 411.4 ( 4.3 ) ( 2.4 ) × 10 − 10 . We also provide the currently most precise calculation of the total isospin-symmetric light-quark connected contribution, a μ iso , conn , ud = 666.2 ( 4.3 ) ( 2.5 ) × 10 − 10 in the BMW20 world, which is more than 4 σ larger compared to the data-driven estimates of Boito [] and 1.7 σ larger compared to the lattice QCD result of BMW20. Published by the American Physical Society 2025

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2023

Update of Euclidean windows of the hadronic vacuum polarization

We compute the standard Euclidean window of the hadronic vacuum polarization using multiple independent blinded analyses. We improve the continuum and infinite-volume extrapolations of the dominant quark-connected light-quark isospin-symmetric contribution and address additional subleading systematic effects from sea-charm quarks and residual chiral-symmetry breaking from first principles. We find 𝑎$^{W}_{μ}$ = 235.56⁢(65)⁢(50) × 10 −10 , which is in 3.8⁢𝜎 tension with the recently published dispersive result of 𝑎$^{W}_{μ}$ =229.4⁢(1.4) × 10 −10 [G. Colangelo, A. X. El-Khadra, M. Hoferichter, A. Keshavarzi, C. Lehner, P. Stoffer, and T. Teubner, Phys. Lett. B 833, 137313 (2022)] and in agreement with other recent lattice determinations. We also provide a result for the standard short-distance window. The results reported here are unchanged compared to our presentation at the Edinburgh workshop of the g-2 Theory Initiative in 2022 [C. Lehner, Talk Presented at the 5th Plenary Meeting of the g-2 Theory Initiative in Edinburgh (2022)].

Lattice QCD↗

DOE OSTI2020

Direct CP violation and the ΔI=1/2 rule in K→ππ decay from the standard model

We present a lattice QCD calculation of the Δ I = 1 / 2 , K → π π decay amplitude A 0 and ϵ ' , the measure of direct C P violation in K → π π decay, improving our 2015 calculation [1] of these quantities. Both calculations were performed with physical kinematics on a 32 3 × 64 lattice with an inverse lattice spacing of a - 1 = 1.3784 ( 68 ) GeV . However, the current calculation includes nearly 4 times the statistics and numerous technical improvements allowing us to more reliably isolate the π π ground state and more accurately relate the lattice operators to those defined in the standard model. We find Re ( A 0 ) = 2.99 ( 0.32 ) ( 0.59 ) × 10 - 7 GeV and Im ( A 0 ) = - 6.98 ( 0.62 ) ( 1.44 ) × 10 - 11 GeV , where the errors are statistical and systematic, respectively. The former agrees well with the experimental result Re ( A 0 ) = 3.3201 ( 18 ) × 10 - 7 GeV . These results for A 0 can be combined with our earlier lattice calculation of A 2 [2] to obtain Re ( ϵ ' / ϵ ) = 21.7 ( 2.6 ) ( 6.2 ) ( 5.0 ) × 10 - 4 , where the third error represents omitted isospin breaking effects, and Re ( A 0 ) / Re ( A 2 ) = 19.9 ( 2.3 ) ( 4.4 ) . The first agrees well with the experimental result of Re ( ϵ ' / ϵ ) = 16.6 ( 2.3 ) × 10 - 4 . A comparison of the second with the observed ratio Re ( A 0 ) / Re ( A 2 ) = 22.45 ( 6 ) , demonstrates the standard model origin of this “ Δ I = 1 / 2 rule” enhancement.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

NASA NTRS2011

Compact Submillimeter-Wave Receivers Made with Semiconductor Nano-Fabrication Technologies

Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1 deg precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.

Silicon micromachining↗