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Kalra, Rachpon

Publications and source records attributed to Kalra, Rachpon.

A single-atom quantum memory in silicon

Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a ‘quantum memory’ while idle. The 31 P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the 31 P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched 28 Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity Fp ! 81%, a memory fidelity Fm ! 92%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following highpower radiofrequency pulses.

97 MATHEMATICS AND COMPUTING↗

A dressed spin qubit in silicon

Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties—a different and easily tunable level splitting, faster control and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and assess its potential as a quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, frequency modulation of the driving field or a simple detuning pulse. We measure coherence times of T* 2p = 2.4 ms and T Hahn 2p = 9 ms, one order of magnitude longer than those of the undressed spin. Moreover, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.

36 MATERIALS SCIENCE↗