Engineering topics

Kamath, S.

Publications and source records attributed to Kamath, S..

5 records

NASA NTRS1992

A VLSI implementation of DCT using pass transistor technology

A VLSI design for performing the Discrete Cosine Transform (DCT) operation on image blocks of size 16 x 16 in a real time fashion operating at 34 MHz (worst case) is presented. The process used was Hewlett-Packard's CMOS26--A 3 metal CMOS process with a minimum feature size of 0.75 micron. The design is based on Multiply-Accumulate (MAC) cells which make use of a modified Booth recoding algorithm for performing multiplication. The design of these cells is straight forward, and the layouts are regular with no complex routing. Two versions of these MAC cells were designed and their layouts completed. Both versions were simulated using SPICE to estimate their performance. One version is slightly faster at the cost of larger silicon area and higher power consumption. An improvement in speed of almost 20 percent is achieved after several iterations of simulation and re-sizing.

Kamath, S.↗

NASA NTRS1979

Fabrication of high efficiency and radiation resistant GaAs solar cells

Systematic improvements in fabrication yield were obtained by appropriate control of the liquid phase epitaxial growth process, contact fabrication and surface preparation. To improve radiation hardness, the junction depth was decreased while overcoming the penalty in decreased solar cell efficiency which tends to go hand-in-hand with the reduction of junction depth in (AlGa) As-GaAs solar cells. Cells were made with an AMO efficiency of 18% and a junction depth of 0.5 micrometers, as compared to junction depths on the order of 1.0 micrometers. With respect to the damage caused by proton irradiation, the nature of the observed damage was correlated to the energy and penetration depth of the damaging protons.

Kamath, S.↗

NASA NTRS1979

High energy proton radiation damage to (AlGa)As-G aAs solar cells

Twelve 2 + 2 sq cm (AlGa)As-GaAs solar cells were fabricated and were subjected to 15.4 and 40 MeV of proton irradiation. The results showed that the GaAs cells degrade considerably less than do conventional and developmental K7 silicon cells. The detailed characteristics of the GaAs and silicon cells, both before and after irradiation, are described. Further optimization of the GaAs cells seems feasible, and areas for future work are suggested.

Loo, R.↗

NASA NTRS1979

Low energy proton radiation damage to (AlGa)As-GaAs solar cells

Twenty-seven 2 times 2 sq cm (AlGa)As-GaAs solar cells were fabricated and subjected to 50 keV, 100 keV, and 290 keV of proton irradiation along with eighteen high efficiency silicon solar cells. The results of the study further corroborate the advantages for space missions offered by GaAs cells over state of the art silicon cells. Thus, even though the GaAs cells showed greater degradation when irradiated by protons with energy less than 5 MeV, the solar cells were normally protected from these protons by the glass covers used in space arrays. The GaAs cells also offered superior end of life power capability compared with silicon. The change in the open circuit voltage, short circuit current, spectral response, and dark 1-5 characteristics after irradiation at each proton energy and fluence were found to be consistent with the explanation of the effect of the protons. Also dark 1-5 characteristics showed that a new recombination center dominates the current transport mechanism after irradiation.

Loo, R.↗

NASA NTRS1977

GaAs solar cell development

The motivation for developing GaAs solar cells is based on their superior efficiency when compared to silicon cells, their lower degradation with increasing temperature, and the expectation for better resistance to space radiation damage. The AMO efficiency of GaAs solar cells was calculated. A key consideration in the HRL technology is the production of GaAs cells of large area (greater than 4 sg cm) at a reasonable cost without sacrificing efficiency. An essential requirement for the successful fabrication of such cells is the ability to grow epitaxially a uniform layer of high quality GaAs (buffer layer) on state-of-the-art GaAs substrates, and to grow on this buffer layer the required than layer of (AlGa)As. A modified infinite melt liquid phase epitaxy (LPE) growth technique is detailed.

Knechtli, R. C.↗