Engineering topics

Kanale, Ajit (ORCID:0000000322743617)

Publications and source records attributed to Kanale, Ajit (ORCID:0000000322743617).

3 records

DOE OSTI2021

Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications

Grid interface power conversion systems for commercial, industrial and residential solar power generation are becoming ubiquitous due to the competitive cost of solar energy. The AC/DC dual active bridge (DAB) converter is an upcoming topology in industrial PV energy and energy storage applications, providing bidirectional power transfer and galvanic isolation. In this paper, the properties of a DAB-type converter are leveraged to propose a design optimization process. It can optimize the high-frequency RMS current, size of magnetic elements and zero-voltage-switching (ZVS) region of the converter. The resulting design is compared against that derived from a conventional approach. In addition, an algorithm to compute the harmonic currents at the DC and line frequency AC ports of the system is proposed, and the respective filter designs are presented. The optimized design of the AC/DC DAB converter is implemented using the newly developed, 1200 V, 46 mΩ, four quadrant, SiC-based monolithic bidirectional FETs (BiDFET). Experimental results from the 2.3 kW, 400V/277VRMS hardware prototype are finally presented to verify the design process.

Bidirectional isolated AC-DC conversion, solar ene↗

DOE OSTI2020

Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

In this paper, we report successful fabrication of the first large area, monolithic, 1.2 kV 4H-SiC Bi-Directional FETs (BiDFETs) with integrated JBS diodes in a 6-inch commercial foundry for use in matrix converters. The fabricated BiDFETs support high voltage (>1.2 kV) in the first and third quadrants. They exhibit very low on-resistance of 50 mΩ in the on-state in both quadrants when the 20 V gate bias is applied to both gates, allowing conduction of 20 A with 1 V drop. Fully gate voltage controlled output characteristics are also confirmed in both quadrants.

4-Quadrant switch↗

DOE OSTI2020

Packaging Development for a 1200V SiC BiDFET Switch Using Highly Thermally Conductive Organic Epoxy Laminate

A novel 1.2 kV/10A, 4H-SiC monolithic, bidirectional switch has been developed for use in cycloconverter applications to facilitate high-frequency direct AC-to-AC power conversion and enables new power converter topologies. A new packaging solution, utilizing a 100 µm flexible polyimide organic laminate substrate is developed to mitigate thermo-mechanical stress during power cycling and enable smaller form factor and lower cost. Multiphysics simulations and static tests were conducted to show performance characterization of the module and compare it against metallic substrates. A new organic laminate epoxy resin composite dielectric (ERCD) is also evaluated for superior thermal performance and shows 63% reduction in junction to case resistance compared to DBC substrates.

Silicon Carbide, Bi-directional switch, BiDFET, MO↗