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Karczewski, G.

Publications and source records attributed to Karczewski, G..

12 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Structural phase transition and manifestation of eddy currents in IR reflection spectra of PbSnTe semiconductor films

Infrared reflection spectra of thin (∼60 nm) Pb{sub 1−x} Sn{sub x}Te (x = 0.25, 0.53, 0.59) films grown by molecular beam epitaxy on GaAs/CdTe hybrid substrates have been measured at frequencies from 20 to 5500 cm{sup −1} and temperatures from 5 to 300 K. The spectra have been used to determine temperature-dependent transverse phonon and plasmon frequencies in the films, which has made it possible to identify a structural phase transition at T{sub C} ≈ 50 K. The plasma frequency of the films has been shown to increase with decreasing band gap on cooling from 300 to 77 K. The increase in plasma frequency is mainly attributable to the increase in carrier concentration and a transition of the carriers from vortex states on the film surface to the valence band. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Emission of Light by CdMnTe/CdMgTe Heterostructure with Narrow Quantum Wells

The optical properties of the Cd{sub 0.4}Mn{sub 0.4}Te/Cd{sub 0.5}Mg{sub 0.5}Te heterostructure with quantum wells of 7 monolayers in thickness are studied. The temperature dependences of the integral intensity of luminescence of the barrier layer and quantum well and intracenter luminescence of manganese ions are determined, and the luminescence excitation spectra are measured. Numerous components corresponding to LO phonons of the CdTe, MgTe, and MnTe types are observed in the Raman scattering spectra.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Exciton Light Emission of CdTe/ZnTe Heterostructures with Double Ultrathin Narrow-Gap Layers

The exciton luminescence spectra of CdTe/ZnTe heterostructures containing two thin CdTe layers separated by barriers of different thickness were studied. The complex temperature dependence of the intensity of luminescence from these layers in its underbarrier and abovebarrier excitation led to the conclusions about the effect of the thickness of the barriers on the energy transfer between the CdTe layers and gave the possibility to observe, at specific temperatures, the implementation of a resonant-type excitation. The dependence of the shape of the exciton emission contours on the excitation level gives information about the real structure of CdTe layers with the monolayer thickness of 1.5 and 4.0 monolayers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Interfacial Ferromagnetism in a Co/CdTe Ferromagnet/Semiconductor Quantum Well Hybrid Structure

The magnetization properties of a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure are investigated by several techniques. Exploiting the proximity effect between acceptor bound holes and magnetic ions we detect the magnetization curves by measuring the circular polarization of photoluminescence in an out-of-plane magnetic field. We show that magnetization originates from interfacial ferromagnet on Co-CdMgTe interface and the proximity effect is caused by magnetization of interfacial Co-CdMgTe ferromagnetic layer whose magnetic properties are very different from Co.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Luminescence of ZnMnTe/ZnMgTe Heterostructures with Monolayer Manganese Inclusions in ZnTe Quantum Wells and Its Behavior in a Magnetic Field

Light emission from ZnMnTe/ZnMgTe structures with the quantum wells ZnTe containing monolayer manganese inclusions and quantum wells Zn{sub 0.45}Mn{sub 0.15}Te were investigated under the different excitation conditions. The heavy-hole exciton σ{sup +} and σ{sup –} magnetic components show the unusual behavior concerning their energy shifts and intensities. It is possible to explain the Zeeman splitting of the heavy exciton emission band if the following factors are taken into account. Firstly, ZnMnTe/ZnMgTe quantum well structures are of the type II due to the strains as concerns to the electron and heavy hole. Secondly, the electron and hole magnetic sublevels population is far from equilibrium due to the fast energy transfer from the electron- hole system to the 3d-shells of magnetic ions.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Infrared Reflection Spectra of Pb{sub 1–x}Sn{sub x}Se (x = 0.2, 0.34) Topological Insulator Films on a ZnTe/GaAs Substrate and the Vibrational Modes of Multilayer Structures

The reflectance spectra of the topological insulator Pb{sub 1–x}Sn{sub x}Se (x = 0.2, 0.34) films grown by molecular-beam epitaxy on a ZnTe/GaAs substrate are measured in the range of 12–2500 cm{sup –1} at room temperature. Using dispersion analysis, the frequencies of transverse optical phonons, plasma frequencies, highfrequency permittivities, and layer thicknesses are determined. In the quasi-steady-state approximation, the interface mode frequencies of the four-layer structure are calculated as a function of the overlap parameter χ{sub 1} (0 ≤ χ{sub 1} ≤ 1). The parameter describes the degree of overlap of two interface modes localized at planes bounding the layer to the right and left. The existence of interacting interface modes in the structure makes its spectrum different from the sum of component spectra. These differences manifest themselves in the experiment. The conditions of the interaction of interface modes with IR radiation are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Optical properties of ZnTe epilayers with submonolayer planar narrow gap inclusions

The exciton luminescence of ZnTe matrices with the embedded CdTe submonolayer inclusions is investigated. It is shown that the exciton localized by CdTe narrow gap component dominates in the emission spectrum. These localized excitons are coupled mainly with the phonons belonging to the cadmium enriched layers. The real distribution of cadmium in the direction of the heterostructure growth is determined from the energy position of the localized exciton emission bands.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Engineering the hole confinement for CdTe-based quantum dot molecules

We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner barriers. We monitor the resulting dot morphology with transmission electron microscopy studies and correlate the results with ensemble quantum dot photoluminescence. Furthermore, we embed the double quantum dots into diode structures and study photoluminescence as a function of bias voltage. We show that in properly engineered structures, it is possible to achieve a resonance of the hole states by tuning the energy levels with electric field. At the resonance, we observe signatures of a formation of a molecular state, hybridized over the two dots.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Optical phonons in PbTe/CdTe multilayer heterostructures

The infrared reflection spectra of PbTe/CdTe multilayer nanostructures grown by molecular-beam epitaxy are measured in the frequency range of 20–5000 cm{sup −1} at room temperature. The thicknesses and high-frequency dielectric constants of the PbTe and CdTe layers and the frequencies of the transverse optical (TO) phonons in these structures are determined from dispersion analysis of the spectra. It is found that the samples under study are characterized by two TO phonon frequencies, equal to 28 and 47 cm{sup −1}. The first frequency is close to that of TO phonons in bulk PbTe, and the second is assigned to the optical mode in structurally distorted interface layers. The Raman-scattering spectra upon excitation with the radiation of an Ar{sup +} laser at 514.5 nm are measured at room and liquid-nitrogen temperatures. The weak line at 106 cm{sup −1} observed in these spectra is attributed to longitudinal optical phonons in the interface layers.

36 MATERIALS SCIENCE↗