Engineering topics

Kasemset, D.

Publications and source records attributed to Kasemset, D..

4 records

NASA NTRS1982

Gain saturation in semiconductor lasers - Theory and experiment

The semiconductor stimulated gain saturation model of Zee has been extended using reasonable approximations to obtain an analytical solution for the gain saturation process in PbSnTe and to determine the limit to single mode power directly from the gain expression, the intraband relaxation time, and device and material parameters. The theoretical results are compared with experimental observations for single transverse mode cavity narrow stripe buried heterostructure PbSnTe lasers. Those results are interpreted in terms of an intraband relaxation time on the order of 2 x 10 to the -12th s in the temperature range 20-80 K.

Kasemset, D.↗

NASA NTRS1981

Longitudinal mode behavior of PbSnTe buried heterostructure lasers

Experimental results are reported on the longitudinal mode characteristics of PbSnTe buried heterostructure laser diodes operating at 10 microns. It is found that both 'wide' (5 microns) and 'narrow' (2 microns) stripe lasers operate in a single longitudinal mode over a range up to two times the threshold, as expected on the basis of the homogeneous gain model. However, a systematic change to multimode operation is found above this pumping level, which this model cannot explain. The observed phenomenon is explained by spectral inhomogeneity with an intraband relaxation time of the order of 2 ps.

Kasemset, D.↗

NASA NTRS1981

Impact ionization in Ga/1-x/Al/x/Sb - An alternative interpretation

The existence of the recently proposed resonance impact ionization process in gallium aluminum antimonide is questioned. An alternative interpretation of the data originally used to support the claim for a resonant process is presented which invokes only conventional, well-established processes.

Kasemset, D.↗

NASA NTRS1980

New PbSnTe heterojunction laser diode structures with improved performance

Several recent advances in the state-of-the-art of lead tin telluride double heterojunction laser diodes are summarized. Continuous Wave operation to 120 K and pulsed operation to 166 K with single, lowest order transverse mode emission to in excess of four times threshold at 80 K were achieved in buried stripe lasers fabricated by liquid phase epitaxy in the lattice-matched system, lead-tin telluride-lead telluride selenide. At the same time, liquid phase epitaxy was used to produce PbSnTe distributed feedback lasers with much broader continuous single mode tuning ranges than are available from Fabry-Perot lasers. The physics and philosophy behind these advances is as important as the structures and performance of the specific devices embodying the advances, particularly since structures are continually being evolved and the performance continues to be improved.

Fonstad, C. G.↗