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Katehi, L. P. B.

Publications and source records attributed to Katehi, L. P. B..

5 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Advanced RF Front End Technology

The ability to achieve low-mass low-cost micro/nanospacecraft for Deep Space exploration requires extensive miniaturization of all subsystems. The front end of the Telecommunication subsystem is an area in which major mass (factor of 10) and volume (factor of 100) reduction can be achieved via the development of new silicon based micromachined technology and devices. Major components that make up the front end include single-pole and double-throw switches, diplexer, and solid state power amplifier. JPL's Center For Space Microsystems - System On A Chip (SOAC) Program has addressed the challenges of front end miniaturization (switches and diplexers). Our objectives were to develop the main components that comprise a communication front end and enable integration in a single module that we refer to as a 'cube'. In this paper we will provide the latest status of our Microelectromechanical System (MEMS) switches and surface micromachined filter development. Based on the significant progress achieved we can begin to provide guidelines of the proper system insertion for these emerging technologies. Additional information is contained in the original extended abstract.

Herman, M. I.↗
NASA NTRS1997

Monolithically Integrated SiGe/Si PIN-HBT Front-End Transimpedance Photoreceivers

The demand for monolithically integrated photoreceivers based on Si-based technology keeps increasing as low cost and high reliability products are required for the expanding commercial market. Higher speed and wider operating frequency range are expected when SiGe/Si heterojunction is introduced to the circuit design. In this paper, a monolithic SiGe/Si PIN-HBT front-end transimpedance photoreceiver is demonstrated for the first time. For this purpose, mesa-type SiGe/Si PIN-HBT technology was developed. Fabricated HBTs exhibit f(sub max) of 34 GHz with DC gain of 25. SiGe/Si PIN photodiodes, which share base and collector layers of HBTs, demonstrate responsivity of 0.3 A/W at lambda=850 nm and bandwidth of 450 MHz. Based on these devices, single- and dual-feedback transimpedance amplifiers were fabricated and they exhibited the bandwidth of 3.2 GHz and 3.3 GHz with the transimpedance gain of 45.2 dB(Omega) and 47.4 dB(Omega) respectively. Monolithically integrated single-feedback PIN-HBT photoreceivers were implemented and the bandwidth was measured to be approx. 0.5 GHz, which is limited by the bandwidth of PIN photodiodes.

Rieh, J.-S.↗
NASA NTRS1993

A comparative study between shielded and open coplanar waveguide discontinuities

A comparative study between open and shielded coplanar waveguide (CPW) discontinuities is presented. The space domain integral equation method is used to characterize several discontinuities such as the open-end CPW and CPW series stubs. Two different geometries of CPW series stubs (straight and bent stubs) are compared with respect to resonant frequency and radiation loss. In addition, the encountered radiation loss due to different CPW shunt stubs is evaluated experimentally. The notion of forced radiation simulation is presented, and the results of such a simulation are compared to the actual radiation loss obtained rigorously. It is shown that such a simulation cannot give reliable results concerning radiation loss from printed circuits.

Dib, Nihad I.↗
NASA NTRS1992

Analysis of a novel non-contacting waveguide backshort

A new non-contacting waveguide backshort has been developed for millimeter and submillimeter wave frequencies. The design consists of a metal bar with rectangular or circular holes cut into it, which is covered with a dielectric (mylar) layer to form a snug fit with the walls of a waveguide. Hole geometries are adjusted to obtain a periodic variation of the guide impedance on the correct length scale, in order to produce efficient reflection of RF power. It is a mechanically rugged design which can be easily fabricated for frequencies from 1 to 1000 GHz and is thus a sound alternative to the miniaturization of conventional non-contacting shorts. To aid in high-frequency design, a rigorous full-wave analysis has been completed, which will allow variations of the size, number and spacing of the holes to be easily analyzed. This paper will review the backshort design and the method developed for theoretical characterization, followed by a comparison of the experimental and numerical results. Low frequency models operating from 4-6 GHz are shown to demonstrate return loss of greater than -0.2 dB over a 33 percent bandwidth. The theory is in good agreement with measured data.

Weller, T. M.↗